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IPP65R125C7XKSA1

MOSFET N-CH 650V 18A TO220


  • Manufacturer: Infineon Technologies
  • Nocochips NO: 376-IPP65R125C7XKSA1
  • Package: TO-220-3
  • Datasheet: PDF
  • Stock: 774
  • Description: MOSFET N-CH 650V 18A TO220 (Kg)

Details

Tags

Parameters
Factory Lead Time 1 Week
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
Number of Pins 3
Supplier Device Package PG-TO220-3
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2008
Series CoolMOS™ C7
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Technology MOSFET (Metal Oxide)
Power Dissipation-Max 101W Tc
Turn On Delay Time 14 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 125mOhm @ 8.9A, 10V
Vgs(th) (Max) @ Id 4V @ 440μA
Halogen Free Halogen Free
Input Capacitance (Ciss) (Max) @ Vds 1670pF @ 400V
Current - Continuous Drain (Id) @ 25°C 18A Tc
Gate Charge (Qg) (Max) @ Vgs 35nC @ 10V
Rise Time 15ns
Drain to Source Voltage (Vdss) 650V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 8 ns
Turn-Off Delay Time 71 ns
Continuous Drain Current (ID) 18A
Gate to Source Voltage (Vgs) 20V
Max Dual Supply Voltage 650V
Input Capacitance 1.67nF
Drain to Source Resistance 110mOhm
Rds On Max 125 mΩ
RoHS Status ROHS3 Compliant
Lead Free Lead Free
See Relate Datesheet

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