banner_page

IPP65R190C6XKSA1

MOSFET N-CH 650V 20.2A TO220


  • Manufacturer: Infineon Technologies
  • Nocochips NO: 376-IPP65R190C6XKSA1
  • Package: TO-220-3
  • Datasheet: PDF
  • Stock: 319
  • Description: MOSFET N-CH 650V 20.2A TO220 (Kg)

Details

Tags

Parameters
Factory Lead Time 1 Week
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2008
Series CoolMOS™
JESD-609 Code e3
Pbfree Code yes
Part Status Not For New Designs
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Terminal Finish Tin (Sn)
Technology MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 3
Qualification Status Not Qualified
Number of Elements 1
Power Dissipation-Max 151W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Turn On Delay Time 13 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 190m Ω @ 7.3A, 10V
Vgs(th) (Max) @ Id 3.5V @ 730μA
Halogen Free Halogen Free
Input Capacitance (Ciss) (Max) @ Vds 1620pF @ 100V
Current - Continuous Drain (Id) @ 25°C 20.2A Tc
Gate Charge (Qg) (Max) @ Vgs 73nC @ 10V
Rise Time 12ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 10 ns
Turn-Off Delay Time 133 ns
Continuous Drain Current (ID) 20.2A
JEDEC-95 Code TO-220AB
Gate to Source Voltage (Vgs) 20V
Max Dual Supply Voltage 650V
Drain-source On Resistance-Max 0.19Ohm
Pulsed Drain Current-Max (IDM) 66A
Avalanche Energy Rating (Eas) 485 mJ
Height 15.95mm
Length 10.36mm
Width 4.57mm
RoHS Status ROHS3 Compliant
Lead Free Lead Free
See Relate Datesheet

Write a review

Note: HTML is not translated!
    Bad           Good