Parameters | |
---|---|
Factory Lead Time | 1 Week |
Contact Plating | Tin |
Mount | Through Hole |
Mounting Type | Through Hole |
Package / Case | TO-220-3 |
Number of Pins | 3 |
Transistor Element Material | SILICON |
Operating Temperature | -55°C~150°C TJ |
Packaging | Tube |
Published | 2008 |
Series | CoolMOS™ |
JESD-609 Code | e3 |
Pbfree Code | yes |
Part Status | Active |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 3 |
Technology | MOSFET (Metal Oxide) |
Terminal Position | SINGLE |
Peak Reflow Temperature (Cel) | NOT SPECIFIED |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
Pin Count | 3 |
Qualification Status | Not Qualified |
Number of Elements | 1 |
Configuration | SINGLE WITH BUILT-IN DIODE |
Power Dissipation-Max | 151W Tc |
Operating Mode | ENHANCEMENT MODE |
Power Dissipation | 151W |
Turn On Delay Time | 12 ns |
FET Type | N-Channel |
Transistor Application | SWITCHING |
Rds On (Max) @ Id, Vgs | 190m Ω @ 7.3A, 10V |
Vgs(th) (Max) @ Id | 4.5V @ 730μA |
Halogen Free | Halogen Free |
Input Capacitance (Ciss) (Max) @ Vds | 1850pF @ 100V |
Current - Continuous Drain (Id) @ 25°C | 17.5A Tc |
Gate Charge (Qg) (Max) @ Vgs | 68nC @ 10V |
Rise Time | 8.4ns |
Drive Voltage (Max Rds On,Min Rds On) | 10V |
Vgs (Max) | ±20V |
Fall Time (Typ) | 6.4 ns |
Turn-Off Delay Time | 53.2 ns |
Continuous Drain Current (ID) | 17.5A |
JEDEC-95 Code | TO-220AB |
Gate to Source Voltage (Vgs) | 20V |
Max Dual Supply Voltage | 650V |
Pulsed Drain Current-Max (IDM) | 57.2A |
Avalanche Energy Rating (Eas) | 484 mJ |
RoHS Status | ROHS3 Compliant |
Lead Free | Lead Free |