Parameters | |
---|---|
FET Type | N-Channel |
Transistor Application | SWITCHING |
Rds On (Max) @ Id, Vgs | 380m Ω @ 3.2A, 10V |
Vgs(th) (Max) @ Id | 3.5V @ 320μA |
Factory Lead Time | 1 Week |
Mounting Type | Through Hole |
Package / Case | TO-220-3 |
Halogen Free | Halogen Free |
Surface Mount | NO |
Number of Pins | 3 |
Transistor Element Material | SILICON |
Input Capacitance (Ciss) (Max) @ Vds | 710pF @ 100V |
Operating Temperature | -55°C~150°C TJ |
Packaging | Tube |
Current - Continuous Drain (Id) @ 25°C | 10.6A Tc |
Published | 2008 |
Gate Charge (Qg) (Max) @ Vgs | 39nC @ 10V |
Series | CoolMOS™ |
JESD-609 Code | e3 |
Rise Time | 12ns |
Pbfree Code | yes |
Drain to Source Voltage (Vdss) | 650V |
Part Status | Obsolete |
Drive Voltage (Max Rds On,Min Rds On) | 10V |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Vgs (Max) | ±20V |
Number of Terminations | 3 |
Fall Time (Typ) | 11 ns |
Terminal Finish | Tin (Sn) |
Technology | MOSFET (Metal Oxide) |
Turn-Off Delay Time | 110 ns |
Peak Reflow Temperature (Cel) | NOT SPECIFIED |
Continuous Drain Current (ID) | 10.6A |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
Pin Count | 3 |
JEDEC-95 Code | TO-220AB |
Qualification Status | Not Qualified |
Gate to Source Voltage (Vgs) | 20V |
Number of Elements | 1 |
Power Dissipation-Max | 83W Tc |
Drain to Source Breakdown Voltage | 700V |
Element Configuration | Single |
Pulsed Drain Current-Max (IDM) | 29A |
Operating Mode | ENHANCEMENT MODE |
Avalanche Energy Rating (Eas) | 215 mJ |
Power Dissipation | 83W |
RoHS Status | RoHS Compliant |
Turn On Delay Time | 12 ns |