IPP80N04S2H4AKSA2
| Parameters | |
|---|---|
| Mount | Through Hole |
| Mounting Type | Through Hole |
| Package / Case | TO-220-3 |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~175°C TJ |
| Packaging | Tube |
| Published | 2008 |
| Series | OptiMOS™ |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| Additional Feature | AVALANCHE RATED |
| Technology | MOSFET (Metal Oxide) |
| Terminal Position | SINGLE |
| JESD-30 Code | R-PSFM-T3 |
| Number of Elements | 1 |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| Power Dissipation-Max | 300W Tc |
| Operating Mode | ENHANCEMENT MODE |
| FET Type | N-Channel |
| Rds On (Max) @ Id, Vgs | 4m Ω @ 80A, 10V |
| Vgs(th) (Max) @ Id | 4V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 4400pF @ 25V |
| Current - Continuous Drain (Id) @ 25°C | 80A Tc |
| Gate Charge (Qg) (Max) @ Vgs | 148nC @ 10V |
| Drain to Source Voltage (Vdss) | 40V |
| Drive Voltage (Max Rds On,Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Continuous Drain Current (ID) | 80A |
| JEDEC-95 Code | TO-220AB |
| Drain-source On Resistance-Max | 0.004Ohm |
| Pulsed Drain Current-Max (IDM) | 320A |
| DS Breakdown Voltage-Min | 40V |
| Avalanche Energy Rating (Eas) | 660 mJ |
| RoHS Status | RoHS Compliant |
See Relate Datesheet
