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IPP80N04S2H4AKSA2

MOSFET N-CH 40V 80A TO220-3


  • Manufacturer: Infineon Technologies
  • Nocochips NO: 376-IPP80N04S2H4AKSA2
  • Package: TO-220-3
  • Datasheet: -
  • Stock: 322
  • Description: MOSFET N-CH 40V 80A TO220-3 (Kg)

Details

Tags

Parameters
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
Transistor Element Material SILICON
Operating Temperature -55°C~175°C TJ
Packaging Tube
Published 2008
Series OptiMOS™
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Additional Feature AVALANCHE RATED
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
JESD-30 Code R-PSFM-T3
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 300W Tc
Operating Mode ENHANCEMENT MODE
FET Type N-Channel
Rds On (Max) @ Id, Vgs 4m Ω @ 80A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 4400pF @ 25V
Current - Continuous Drain (Id) @ 25°C 80A Tc
Gate Charge (Qg) (Max) @ Vgs 148nC @ 10V
Drain to Source Voltage (Vdss) 40V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Continuous Drain Current (ID) 80A
JEDEC-95 Code TO-220AB
Drain-source On Resistance-Max 0.004Ohm
Pulsed Drain Current-Max (IDM) 320A
DS Breakdown Voltage-Min 40V
Avalanche Energy Rating (Eas) 660 mJ
RoHS Status RoHS Compliant
See Relate Datesheet

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