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IPP80N06S208AKSA2

MOSFET N-CH 55V 80A TO220-3


  • Manufacturer: Infineon Technologies
  • Nocochips NO: 376-IPP80N06S208AKSA2
  • Package: TO-220-3
  • Datasheet: PDF
  • Stock: 345
  • Description: MOSFET N-CH 55V 80A TO220-3 (Kg)

Details

Tags

Parameters
Mounting Type Through Hole
Package / Case TO-220-3
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -55°C~175°C TJ
Packaging Tube
Published 2006
Series OptiMOS™
Pbfree Code yes
Part Status Not For New Designs
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Technology MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Number of Elements 1
Voltage 55V
Power Dissipation-Max 215W Tc
Element Configuration Single
Current 80A
Operating Mode ENHANCEMENT MODE
Power Dissipation 215W
Turn On Delay Time 14 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 8m Ω @ 58A, 10V
Vgs(th) (Max) @ Id 4V @ 150μA
Halogen Free Halogen Free
Input Capacitance (Ciss) (Max) @ Vds 2860pF @ 25V
Current - Continuous Drain (Id) @ 25°C 80A Tc
Gate Charge (Qg) (Max) @ Vgs 96nC @ 10V
Rise Time 15ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 14 ns
Turn-Off Delay Time 32 ns
Continuous Drain Current (ID) 80A
JEDEC-95 Code TO-220AB
Gate to Source Voltage (Vgs) 20V
Max Dual Supply Voltage 55V
Drain-source On Resistance-Max 0.008Ohm
Drain to Source Breakdown Voltage 55V
Avalanche Energy Rating (Eas) 450 mJ
RoHS Status ROHS3 Compliant
Factory Lead Time 1 Week
Contact Plating Tin
Mount Through Hole
See Relate Datesheet

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