banner_page

IPP80N06S209AKSA2

MOSFET N-CH 55V 80A TO220-3


  • Manufacturer: Infineon Technologies
  • Nocochips NO: 376-IPP80N06S209AKSA2
  • Package: TO-220-3
  • Datasheet: PDF
  • Stock: 686
  • Description: MOSFET N-CH 55V 80A TO220-3 (Kg)

Details

Tags

Parameters
Factory Lead Time 1 Week
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
Transistor Element Material SILICON
Operating Temperature -55°C~175°C TJ
Packaging Tube
Published 2006
Series OptiMOS™
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin (Sn)
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Reach Compliance Code not_compliant
Reference Standard AEC-Q101
JESD-30 Code R-PSFM-T3
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 190W Tc
Operating Mode ENHANCEMENT MODE
FET Type N-Channel
Rds On (Max) @ Id, Vgs 9.1m Ω @ 50A, 10V
Vgs(th) (Max) @ Id 4V @ 125μA
Halogen Free Halogen Free
Input Capacitance (Ciss) (Max) @ Vds 2360pF @ 25V
Current - Continuous Drain (Id) @ 25°C 80A Tc
Gate Charge (Qg) (Max) @ Vgs 80nC @ 10V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Continuous Drain Current (ID) 80A
JEDEC-95 Code TO-220AB
Max Dual Supply Voltage 55V
Drain-source On Resistance-Max 0.0091Ohm
Pulsed Drain Current-Max (IDM) 320A
Avalanche Energy Rating (Eas) 370 mJ
RoHS Status ROHS3 Compliant
Lead Free Contains Lead
See Relate Datesheet

Write a review

Note: HTML is not translated!
    Bad           Good