IPP80N06S2H5AKSA2
| Parameters | |
|---|---|
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 300W |
| Turn On Delay Time | 23 ns |
| FET Type | N-Channel |
| Rds On (Max) @ Id, Vgs | 5.5m Ω @ 80A, 10V |
| Vgs(th) (Max) @ Id | 4V @ 230μA |
| Halogen Free | Halogen Free |
| Input Capacitance (Ciss) (Max) @ Vds | 4400pF @ 25V |
| Factory Lead Time | 1 Week |
| Current - Continuous Drain (Id) @ 25°C | 80A Tc |
| Gate Charge (Qg) (Max) @ Vgs | 155nC @ 10V |
| Mount | Through Hole |
| Rise Time | 23ns |
| Mounting Type | Through Hole |
| Drive Voltage (Max Rds On,Min Rds On) | 10V |
| Package / Case | TO-220-3 |
| Number of Pins | 3 |
| Vgs (Max) | ±20V |
| Transistor Element Material | SILICON |
| Fall Time (Typ) | 22 ns |
| Operating Temperature | -55°C~175°C TJ |
| Turn-Off Delay Time | 48 ns |
| Continuous Drain Current (ID) | 80A |
| Packaging | Tube |
| JEDEC-95 Code | TO-220AB |
| Published | 2006 |
| Gate to Source Voltage (Vgs) | 20V |
| Series | OptiMOS™ |
| Max Dual Supply Voltage | 55V |
| Drain-source On Resistance-Max | 0.0055Ohm |
| JESD-609 Code | e3 |
| Drain to Source Breakdown Voltage | 55V |
| Pbfree Code | yes |
| Avalanche Energy Rating (Eas) | 700 mJ |
| Part Status | Obsolete |
| Height | 15.65mm |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Length | 10mm |
| Number of Terminations | 3 |
| Width | 4.4mm |
| RoHS Status | ROHS3 Compliant |
| ECCN Code | EAR99 |
| Lead Free | Contains Lead |
| Terminal Finish | Tin (Sn) |
| Technology | MOSFET (Metal Oxide) |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED |
| Reach Compliance Code | not_compliant |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| Number of Elements | 1 |
| Power Dissipation-Max | 300W Tc |
| Element Configuration | Single |
See Relate Datesheet
