IPP80N06S2L-07
| Parameters | |
|---|---|
| Drive Voltage (Max Rds On,Min Rds On) | 4.5V 10V |
| Vgs (Max) | ±20V |
| JEDEC-95 Code | TO-220AB |
| Drain Current-Max (Abs) (ID) | 80A |
| Drain-source On Resistance-Max | 0.01Ohm |
| Pulsed Drain Current-Max (IDM) | 320A |
| DS Breakdown Voltage-Min | 55V |
| Avalanche Energy Rating (Eas) | 450 mJ |
| RoHS Status | ROHS3 Compliant |
| Mounting Type | Through Hole |
| Package / Case | TO-220-3 |
| Surface Mount | NO |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~175°C TJ |
| Packaging | Tube |
| Published | 2003 |
| Series | OptiMOS™ |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Discontinued |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| ECCN Code | EAR99 |
| Terminal Finish | TIN |
| Additional Feature | LOGIC LEVEL COMPATIBLE |
| Subcategory | FET General Purpose Power |
| Technology | MOSFET (Metal Oxide) |
| Terminal Position | SINGLE |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| Pin Count | 3 |
| JESD-30 Code | R-PSFM-T3 |
| Qualification Status | Not Qualified |
| Number of Elements | 1 |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| Power Dissipation-Max | 210W Tc |
| Operating Mode | ENHANCEMENT MODE |
| FET Type | N-Channel |
| Rds On (Max) @ Id, Vgs | 7m Ω @ 60A, 10V |
| Vgs(th) (Max) @ Id | 2V @ 150μA |
| Input Capacitance (Ciss) (Max) @ Vds | 3160pF @ 25V |
| Current - Continuous Drain (Id) @ 25°C | 80A Tc |
| Gate Charge (Qg) (Max) @ Vgs | 130nC @ 10V |
| Drain to Source Voltage (Vdss) | 55V |
See Relate Datesheet
