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IPP90R1K2C3XKSA1

Trans MOSFET N-CH 900V 5.1A 3-Pin(3+Tab) TO-220


  • Manufacturer: Infineon Technologies
  • Nocochips NO: 376-IPP90R1K2C3XKSA1
  • Package: TO-220-3
  • Datasheet: PDF
  • Stock: 335
  • Description: Trans MOSFET N-CH 900V 5.1A 3-Pin(3+Tab) TO-220 (Kg)

Details

Tags

Parameters
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2008
Series CoolMOS™
JESD-609 Code e3
Pbfree Code yes
Part Status Not For New Designs
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin (Sn)
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Pin Count 3
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 83W Tc
Operating Mode ENHANCEMENT MODE
Power Dissipation 83W
Turn On Delay Time 70 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 1.2 Ω @ 2.8A, 10V
Vgs(th) (Max) @ Id 3.5V @ 310μA
Halogen Free Halogen Free
Input Capacitance (Ciss) (Max) @ Vds 710pF @ 100V
Current - Continuous Drain (Id) @ 25°C 5.1A Tc
Gate Charge (Qg) (Max) @ Vgs 28nC @ 10V
Rise Time 20ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 40 ns
Turn-Off Delay Time 400 ns
Continuous Drain Current (ID) 5.1A
JEDEC-95 Code TO-220AB
Gate to Source Voltage (Vgs) 20V
Max Dual Supply Voltage 900V
Avalanche Energy Rating (Eas) 68 mJ
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
See Relate Datesheet

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