IPS031N03LGAKMA1
| Parameters | |
|---|---|
| Factory Lead Time | 1 Week |
| Mount | Through Hole |
| Package / Case | TO-251-3 |
| Number of Pins | 3 |
| Published | 2008 |
| JESD-609 Code | e3 |
| Pbfree Code | no |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| ECCN Code | EAR99 |
| Terminal Finish | Tin (Sn) |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Additional Feature | AVALANCHE RATED, LOGIC LEVEL COMPATIBLE |
| HTS Code | 8541.29.00.95 |
| Max Power Dissipation | 94W |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| Pin Count | 3 |
| Qualification Status | Not Qualified |
| Number of Elements | 1 |
| Element Configuration | Single |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 94W |
| Turn On Delay Time | 9 ns |
| Transistor Application | SWITCHING |
| Halogen Free | Halogen Free |
| Rise Time | 6ns |
| Drain to Source Voltage (Vdss) | 30V |
| Polarity/Channel Type | N-CHANNEL |
| Fall Time (Typ) | 5 ns |
| Turn-Off Delay Time | 34 ns |
| Continuous Drain Current (ID) | 90A |
| Gate to Source Voltage (Vgs) | 20V |
| Drain to Source Breakdown Voltage | 30V |
| Pulsed Drain Current-Max (IDM) | 400A |
| Input Capacitance | 4nF |
| Avalanche Energy Rating (Eas) | 60 mJ |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| Drain to Source Resistance | 3.1mOhm |
| Rds On Max | 3.1 mΩ |
| Height | 6.22mm |
| Length | 6.73mm |
| Width | 2.39mm |
| RoHS Status | RoHS Compliant |
See Relate Datesheet
