IPT65R195G7XTMA1
| Parameters | |
|---|---|
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| Power Dissipation-Max | 97W Tc |
| FET Type | N-Channel |
| Rds On (Max) @ Id, Vgs | 195m Ω @ 4.8A, 10V |
| Vgs(th) (Max) @ Id | 4V @ 240μA |
| Input Capacitance (Ciss) (Max) @ Vds | 996pF @ 400V |
| Current - Continuous Drain (Id) @ 25°C | 14A Tc |
| Gate Charge (Qg) (Max) @ Vgs | 20nC @ 10V |
| Drain to Source Voltage (Vdss) | 650V |
| Drive Voltage (Max Rds On,Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| RoHS Status | ROHS3 Compliant |
| Factory Lead Time | 1 Week |
| Mounting Type | Surface Mount |
| Package / Case | 8-PowerSFN |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2013 |
| Series | CoolMOS™ C7 |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| ECCN Code | EAR99 |
| Terminal Finish | Tin (Sn) |
| Technology | MOSFET (Metal Oxide) |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED |
See Relate Datesheet
