IPU50R2K0CEBKMA1
| Parameters | |
|---|---|
| Turn On Delay Time | 6 ns |
| FET Type | N-Channel |
| Rds On (Max) @ Id, Vgs | 2 Ω @ 600mA, 13V |
| Vgs(th) (Max) @ Id | 3.5V @ 50μA |
| Input Capacitance (Ciss) (Max) @ Vds | 124pF @ 100V |
| Current - Continuous Drain (Id) @ 25°C | 2.4A Tc |
| Gate Charge (Qg) (Max) @ Vgs | 6nC @ 10V |
| Rise Time | 5ns |
| Drain to Source Voltage (Vdss) | 500V |
| Drive Voltage (Max Rds On,Min Rds On) | 13V |
| Vgs (Max) | ±20V |
| Fall Time (Typ) | 38 ns |
| Turn-Off Delay Time | 21 ns |
| Continuous Drain Current (ID) | 2.4A |
| Gate to Source Voltage (Vgs) | 20V |
| Drain to Source Breakdown Voltage | 550V |
| Height | 6.22mm |
| Length | 6.73mm |
| Width | 2.41mm |
| RoHS Status | RoHS Compliant |
| Mount | Surface Mount, Through Hole |
| Mounting Type | Through Hole |
| Package / Case | TO-251-3 Short Leads, IPak, TO-251AA |
| Number of Pins | 3 |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tube |
| Published | 2013 |
| Series | CoolMOS™ |
| Pbfree Code | no |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 3 (168 Hours) |
| ECCN Code | EAR99 |
| Subcategory | FET General Purpose Power |
| Technology | MOSFET (Metal Oxide) |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| Number of Elements | 1 |
| Power Dissipation-Max | 22W Tc |
| Element Configuration | Single |
| Power Dissipation | 22W |
See Relate Datesheet
