Parameters | |
---|---|
Mounting Type | Through Hole |
Package / Case | TO-251-3 Short Leads, IPak, TO-251AA |
Surface Mount | NO |
Number of Pins | 3 |
Transistor Element Material | SILICON |
Operating Temperature | -55°C~150°C TJ |
Packaging | Tube |
Published | 2008 |
Series | CoolMOS™ |
JESD-609 Code | e3 |
Pbfree Code | no |
Part Status | Obsolete |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 3 |
ECCN Code | EAR99 |
Resistance | 1.8Ohm |
Terminal Finish | Tin (Sn) |
Technology | MOSFET (Metal Oxide) |
Terminal Position | SINGLE |
Peak Reflow Temperature (Cel) | NOT SPECIFIED |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
Pin Count | 3 |
Number of Elements | 1 |
Configuration | SINGLE WITH BUILT-IN DIODE |
Power Dissipation-Max | 22.3W Tc |
Operating Mode | ENHANCEMENT MODE |
FET Type | N-Channel |
Transistor Application | SWITCHING |
Rds On (Max) @ Id, Vgs | 2 Ω @ 760mA, 10V |
Vgs(th) (Max) @ Id | 3.5V @ 60μA |
Input Capacitance (Ciss) (Max) @ Vds | 140pF @ 100V |
Current - Continuous Drain (Id) @ 25°C | 2.4A Tc |
Gate Charge (Qg) (Max) @ Vgs | 6.7nC @ 10V |
Drain to Source Voltage (Vdss) | 600V |
Drive Voltage (Max Rds On,Min Rds On) | 10V |
Vgs (Max) | ±20V |
Pulsed Drain Current-Max (IDM) | 6A |
DS Breakdown Voltage-Min | 600V |
Avalanche Energy Rating (Eas) | 11 mJ |
REACH SVHC | No SVHC |
RoHS Status | RoHS Compliant |