IPU60R950C6BKMA1
| Parameters | |
|---|---|
| Vgs (Max) | ±20V |
| Mount | Through Hole |
| Mounting Type | Through Hole |
| Fall Time (Typ) | 13 ns |
| Package / Case | TO-251-3 Short Leads, IPak, TO-251AA |
| Number of Pins | 3 |
| Turn-Off Delay Time | 60 ns |
| Transistor Element Material | SILICON |
| Continuous Drain Current (ID) | 4.4A |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tube |
| Gate to Source Voltage (Vgs) | 20V |
| Published | 2012 |
| Max Dual Supply Voltage | 600V |
| Series | CoolMOS™ |
| Drain-source On Resistance-Max | 0.95Ohm |
| Pbfree Code | no |
| Part Status | Discontinued |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Drain to Source Breakdown Voltage | 650V |
| Number of Terminations | 3 |
| Avalanche Energy Rating (Eas) | 46 mJ |
| Height | 6.22mm |
| ECCN Code | EAR99 |
| Length | 6.73mm |
| Technology | MOSFET (Metal Oxide) |
| Width | 2.41mm |
| RoHS Status | ROHS3 Compliant |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED |
| Lead Free | Contains Lead |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| Pin Count | 3 |
| Number of Elements | 1 |
| Power Dissipation-Max | 37W Tc |
| Element Configuration | Single |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 37W |
| Turn On Delay Time | 10 ns |
| FET Type | N-Channel |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 950m Ω @ 1.5A, 10V |
| Vgs(th) (Max) @ Id | 3.5V @ 130μA |
| Halogen Free | Halogen Free |
| Input Capacitance (Ciss) (Max) @ Vds | 280pF @ 100V |
| Current - Continuous Drain (Id) @ 25°C | 4.4A Tc |
| Gate Charge (Qg) (Max) @ Vgs | 1.5nC @ 10V |
| Rise Time | 8ns |
| Drive Voltage (Max Rds On,Min Rds On) | 10V |
See Relate Datesheet
