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IPW60R045CPAFKSA1

MOSFET N-CH 650V 60A TO-247


  • Manufacturer: Infineon Technologies
  • Nocochips NO: 376-IPW60R045CPAFKSA1
  • Package: TO-247-3
  • Datasheet: PDF
  • Stock: 527
  • Description: MOSFET N-CH 650V 60A TO-247 (Kg)

Details

Tags

Parameters
Factory Lead Time 1 Week
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Transistor Element Material SILICON
Operating Temperature -40°C~150°C TJ
Packaging Tube
Published 2010
Series Automotive, AEC-Q101, CoolMOS™
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Terminal Finish Tin (Sn)
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 3
JESD-30 Code R-PSFM-T3
Qualification Status Not Qualified
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Number of Channels 1
Power Dissipation-Max 431W Tc
Operating Mode ENHANCEMENT MODE
Power Dissipation 431W
Turn On Delay Time 30 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 45m Ω @ 44A, 10V
Vgs(th) (Max) @ Id 3.5V @ 3mA
Input Capacitance (Ciss) (Max) @ Vds 6800pF @ 100V
Current - Continuous Drain (Id) @ 25°C 60A Tc
Gate Charge (Qg) (Max) @ Vgs 190nC @ 10V
Rise Time 20ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 10 ns
Turn-Off Delay Time 100 ns
Continuous Drain Current (ID) 60A
Gate to Source Voltage (Vgs) 20V
Max Dual Supply Voltage 600V
Drain-source On Resistance-Max 0.045Ohm
Drain to Source Breakdown Voltage 600V
Pulsed Drain Current-Max (IDM) 230A
Max Junction Temperature (Tj) 150°C
Height 25.4mm
RoHS Status ROHS3 Compliant
Lead Free Lead Free
See Relate Datesheet

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