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IPW60R125P6XKSA1

MOSFET N-CH 600V TO247-3


  • Manufacturer: Infineon Technologies
  • Nocochips NO: 376-IPW60R125P6XKSA1
  • Package: TO-247-3
  • Datasheet: PDF
  • Stock: 455
  • Description: MOSFET N-CH 600V TO247-3 (Kg)

Details

Tags

Parameters
Terminal Finish Tin (Sn)
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-PSFM-T3
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 219W Tc
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 125m Ω @ 11.6A, 10V
Vgs(th) (Max) @ Id 4.5V @ 960μA
Halogen Free Halogen Free
Input Capacitance (Ciss) (Max) @ Vds 2660pF @ 100V
Current - Continuous Drain (Id) @ 25°C 30A Tc
Gate Charge (Qg) (Max) @ Vgs 56nC @ 10V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Continuous Drain Current (ID) 30A
Max Dual Supply Voltage 600V
Drain-source On Resistance-Max 0.125Ohm
Pulsed Drain Current-Max (IDM) 87A
Avalanche Energy Rating (Eas) 636 mJ
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Factory Lead Time 1 Week
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2008
Series CoolMOS™ P6
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
See Relate Datesheet

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