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IPW60R160P6FKSA1

MOSFET N-CH 600V TO247-3


  • Manufacturer: Infineon Technologies
  • Nocochips NO: 376-IPW60R160P6FKSA1
  • Package: TO-247-3
  • Datasheet: PDF
  • Stock: 928
  • Description: MOSFET N-CH 600V TO247-3 (Kg)

Details

Tags

Parameters
Drain to Source Voltage (Vdss) 600V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 5.8 ns
Turn-Off Delay Time 40 ns
Continuous Drain Current (ID) 23.8A
Gate to Source Voltage (Vgs) 20V
Max Dual Supply Voltage 600V
Input Capacitance 2.08nF
Drain to Source Resistance 144mOhm
Rds On Max 160 mΩ
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Factory Lead Time 1 Week
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Number of Pins 3
Supplier Device Package PG-TO247-3
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2008
Series CoolMOS™ P6
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Technology MOSFET (Metal Oxide)
Power Dissipation-Max 176W Tc
Turn On Delay Time 12.5 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 160mOhm @ 9A, 10V
Vgs(th) (Max) @ Id 4.5V @ 750μA
Input Capacitance (Ciss) (Max) @ Vds 2080pF @ 100V
Current - Continuous Drain (Id) @ 25°C 23.8A Tc
Gate Charge (Qg) (Max) @ Vgs 44nC @ 10V
Rise Time 7.6ns
See Relate Datesheet

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