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IPW60R180P7XKSA1

MOSFET N-CH 650V 18A TO247-3


  • Manufacturer: Infineon Technologies
  • Nocochips NO: 376-IPW60R180P7XKSA1
  • Package: TO-247-3
  • Datasheet: PDF
  • Stock: 505
  • Description: MOSFET N-CH 650V 18A TO247-3 (Kg)

Details

Tags

Parameters
Factory Lead Time 1 Week
Mounting Type Through Hole
Package / Case TO-247-3
Surface Mount NO
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2017
Series CoolMOS™ P7
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-PSFM-T3
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 72W Tc
Operating Mode ENHANCEMENT MODE
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 180m Ω @ 5.6A, 10V
Vgs(th) (Max) @ Id 4V @ 280μA
Input Capacitance (Ciss) (Max) @ Vds 1081pF @ 400V
Current - Continuous Drain (Id) @ 25°C 18A Tc
Gate Charge (Qg) (Max) @ Vgs 25nC @ 10V
Drain to Source Voltage (Vdss) 650V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Drain-source On Resistance-Max 0.18Ohm
Pulsed Drain Current-Max (IDM) 53A
DS Breakdown Voltage-Min 600V
Avalanche Energy Rating (Eas) 56 mJ
RoHS Status ROHS3 Compliant
See Relate Datesheet

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