Parameters | |
---|---|
Packaging | Tube |
Published | 2008 |
Series | CoolMOS™ C7 |
JESD-609 Code | e3 |
Part Status | Active |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 3 |
Terminal Finish | Tin (Sn) |
Technology | MOSFET (Metal Oxide) |
Terminal Position | SINGLE |
Peak Reflow Temperature (Cel) | NOT SPECIFIED |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
Number of Elements | 1 |
Configuration | SINGLE WITH BUILT-IN DIODE |
Power Dissipation-Max | 446W Tc |
Operating Mode | ENHANCEMENT MODE |
Power Dissipation | 446W |
Case Connection | DRAIN |
Turn On Delay Time | 30 ns |
FET Type | N-Channel |
Transistor Application | SWITCHING |
Rds On (Max) @ Id, Vgs | 19m Ω @ 58.3A, 10V |
Vgs(th) (Max) @ Id | 4V @ 2.92mA |
Input Capacitance (Ciss) (Max) @ Vds | 9900pF @ 400V |
Current - Continuous Drain (Id) @ 25°C | 75A Tc |
Gate Charge (Qg) (Max) @ Vgs | 215nC @ 10V |
Rise Time | 27ns |
Drive Voltage (Max Rds On,Min Rds On) | 10V |
Vgs (Max) | ±20V |
Fall Time (Typ) | 5 ns |
Turn-Off Delay Time | 106 ns |
Continuous Drain Current (ID) | 75A |
Gate to Source Voltage (Vgs) | 20V |
Max Dual Supply Voltage | 650V |
Pulsed Drain Current-Max (IDM) | 496A |
RoHS Status | ROHS3 Compliant |
Lead Free | Lead Free |
Factory Lead Time | 1 Week |
Mount | Through Hole |
Mounting Type | Through Hole |
Package / Case | TO-247-3 |
Number of Pins | 3 |
Transistor Element Material | SILICON |
Operating Temperature | -55°C~150°C TJ |