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IPW65R065C7XKSA1

MOSFET N-CH 650V TO-247-3


  • Manufacturer: Infineon Technologies
  • Nocochips NO: 376-IPW65R065C7XKSA1
  • Package: TO-247-3
  • Datasheet: PDF
  • Stock: 529
  • Description: MOSFET N-CH 650V TO-247-3 (Kg)

Details

Tags

Parameters
Lead Free Lead Free
Factory Lead Time 1 Week
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Number of Pins 3
Supplier Device Package PG-TO247-3
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2008
Series CoolMOS™ C7
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Technology MOSFET (Metal Oxide)
Power Dissipation-Max 171W Tc
Turn On Delay Time 17 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 65mOhm @ 17.1A, 10V
Vgs(th) (Max) @ Id 4V @ 850μA
Halogen Free Halogen Free
Input Capacitance (Ciss) (Max) @ Vds 3020pF @ 400V
Current - Continuous Drain (Id) @ 25°C 33A Tc
Gate Charge (Qg) (Max) @ Vgs 64nC @ 10V
Rise Time 14ns
Drain to Source Voltage (Vdss) 650V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 7 ns
Turn-Off Delay Time 72 ns
Continuous Drain Current (ID) 33A
Gate to Source Voltage (Vgs) 20V
Max Dual Supply Voltage 650V
Input Capacitance 3.02nF
Drain to Source Resistance 58mOhm
Rds On Max 65 mΩ
RoHS Status ROHS3 Compliant
See Relate Datesheet

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