banner_page

IPW65R080CFDAFKSA1

Trans MOSFET N-CH 650V 43.3A Automotive 3-Pin(3+Tab) TO-247


  • Manufacturer: Infineon Technologies
  • Nocochips NO: 376-IPW65R080CFDAFKSA1
  • Package: TO-247-3
  • Datasheet: PDF
  • Stock: 980
  • Description: Trans MOSFET N-CH 650V 43.3A Automotive 3-Pin(3+Tab) TO-247 (Kg)

Details

Tags

Parameters
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 80m Ω @ 17.6A, 10V
Vgs(th) (Max) @ Id 4.5V @ 1.76mA
Input Capacitance (Ciss) (Max) @ Vds 4440pF @ 100V
Current - Continuous Drain (Id) @ 25°C 43.3A Tc
Gate Charge (Qg) (Max) @ Vgs 161nC @ 10V
Rise Time 18ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 6 ns
Turn-Off Delay Time 85 ns
Continuous Drain Current (ID) 43.3A
Gate to Source Voltage (Vgs) 20V
Max Dual Supply Voltage 650V
Drain-source On Resistance-Max 0.08Ohm
Drain to Source Breakdown Voltage 650V
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Factory Lead Time 1 Week
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Transistor Element Material SILICON
Operating Temperature -40°C~150°C TJ
Packaging Tube
Published 2008
Series Automotive, AEC-Q101, CoolMOS™
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin (Sn)
Additional Feature HIGH RELIABILITY
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 3
JESD-30 Code R-PSFM-T3
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 391W Tc
Operating Mode ENHANCEMENT MODE
Turn On Delay Time 20 ns
FET Type N-Channel
See Relate Datesheet

Write a review

Note: HTML is not translated!
    Bad           Good