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IPW65R110CFDAFKSA1

Trans MOSFET N-CH 650V 31.2A 3-Pin(3+Tab) TO-247


  • Manufacturer: Infineon Technologies
  • Nocochips NO: 376-IPW65R110CFDAFKSA1
  • Package: TO-247-3
  • Datasheet: PDF
  • Stock: 984
  • Description: Trans MOSFET N-CH 650V 31.2A 3-Pin(3+Tab) TO-247 (Kg)

Details

Tags

Parameters
Factory Lead Time 1 Week
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -40°C~150°C TJ
Packaging Tube
Published 2008
Series Automotive, AEC-Q101, CoolMOS™
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Terminal Finish Tin (Sn)
Additional Feature HIGH RELIABILITY
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 3
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 277.8W Tc
Operating Mode ENHANCEMENT MODE
Turn On Delay Time 16 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 110m Ω @ 12.7A, 10V
Vgs(th) (Max) @ Id 4.5V @ 1.3mA
Input Capacitance (Ciss) (Max) @ Vds 3240pF @ 100V
Current - Continuous Drain (Id) @ 25°C 31.2A Tc
Gate Charge (Qg) (Max) @ Vgs 118nC @ 10V
Rise Time 11ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 6 ns
Turn-Off Delay Time 68 ns
Continuous Drain Current (ID) 31.2A
Gate to Source Voltage (Vgs) 20V
Max Dual Supply Voltage 650V
Drain-source On Resistance-Max 0.11Ohm
Pulsed Drain Current-Max (IDM) 99.6A
Avalanche Energy Rating (Eas) 845 mJ
RoHS Status ROHS3 Compliant
Lead Free Lead Free
See Relate Datesheet

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