IPW65R190CFDAFKSA1
| Parameters | |
|---|---|
| Factory Lead Time | 1 Week |
| Mount | Through Hole |
| Mounting Type | Through Hole |
| Package / Case | TO-247-3 |
| Number of Pins | 3 |
| Transistor Element Material | SILICON |
| Operating Temperature | -40°C~150°C TJ |
| Packaging | Tube |
| Published | 2012 |
| Series | Automotive, AEC-Q101, CoolMOS™ |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Last Time Buy |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| Terminal Finish | Tin (Sn) |
| Additional Feature | HIGH RELIABILITY |
| Subcategory | FET General Purpose Power |
| Technology | MOSFET (Metal Oxide) |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| Pin Count | 3 |
| Number of Elements | 1 |
| Power Dissipation-Max | 151W Tc |
| Element Configuration | Single |
| Operating Mode | ENHANCEMENT MODE |
| Turn On Delay Time | 12 ns |
| FET Type | N-Channel |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 190m Ω @ 7.3A, 10V |
| Vgs(th) (Max) @ Id | 4.5V @ 700μA |
| Input Capacitance (Ciss) (Max) @ Vds | 1850pF @ 100V |
| Current - Continuous Drain (Id) @ 25°C | 17.5A Tc |
| Gate Charge (Qg) (Max) @ Vgs | 68nC @ 10V |
| Drive Voltage (Max Rds On,Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Turn-Off Delay Time | 53.2 ns |
| Continuous Drain Current (ID) | 17.5A |
| Gate to Source Voltage (Vgs) | 30V |
| Max Dual Supply Voltage | 650V |
| Drain-source On Resistance-Max | 0.19Ohm |
| Pulsed Drain Current-Max (IDM) | 57.2A |
| Avalanche Energy Rating (Eas) | 484 mJ |
| Height | 21.1mm |
| Length | 16.03mm |
| Width | 5.16mm |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
See Relate Datesheet
