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IPZ40N04S55R4ATMA1

MOSFET N-CH 8TDSON


  • Manufacturer: Infineon Technologies
  • Nocochips NO: 376-IPZ40N04S55R4ATMA1
  • Package: 8-PowerVDFN
  • Datasheet: PDF
  • Stock: 728
  • Description: MOSFET N-CH 8TDSON (Kg)

Details

Tags

Parameters
Drain-source On Resistance-Max 0.0063Ohm
Pulsed Drain Current-Max (IDM) 160A
Avalanche Energy Rating (Eas) 53 mJ
RoHS Status ROHS3 Compliant
Lead Free Contains Lead
Factory Lead Time 1 Week
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-PowerVDFN
Number of Pins 8
Transistor Element Material SILICON
Operating Temperature -55°C~175°C TJ
Packaging Tape & Reel (TR)
Published 2013
Series Automotive, AEC-Q101, OptiMOS™
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin (Sn)
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form NO LEAD
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code not_compliant
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-PDSO-N3
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 48W Tc
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type N-Channel
Rds On (Max) @ Id, Vgs 5.4m Ω @ 20A, 10V
Vgs(th) (Max) @ Id 3.4V @ 17μA
Halogen Free Halogen Free
Input Capacitance (Ciss) (Max) @ Vds 1300pF @ 25V
Current - Continuous Drain (Id) @ 25°C 40A Tc
Gate Charge (Qg) (Max) @ Vgs 23nC @ 10V
Drive Voltage (Max Rds On,Min Rds On) 7V 10V
Vgs (Max) ±20V
Continuous Drain Current (ID) 40A
Max Dual Supply Voltage 40V
See Relate Datesheet

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