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IPZ40N04S5L2R8ATMA1

IPZ40N04S5L2R8ATMA1 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available at Feilidi


  • Manufacturer: Infineon Technologies
  • Nocochips NO: 376-IPZ40N04S5L2R8ATMA1
  • Package: 8-PowerVDFN
  • Datasheet: PDF
  • Stock: 388
  • Description: IPZ40N04S5L2R8ATMA1 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available at Feilidi (Kg)

Details

Tags

Parameters
Max Junction Temperature (Tj) 175°C
Height 1.15mm
RoHS Status ROHS3 Compliant
Series Automotive, AEC-Q101, OptiMOS™
Lead Free Contains Lead
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form NO LEAD
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code not_compliant
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-PDSO-N3
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Number of Channels 1
Power Dissipation-Max 71W Tc
Operating Mode ENHANCEMENT MODE
Power Dissipation 71W
Case Connection DRAIN
Turn On Delay Time 4 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 2.8m Ω @ 20A, 10V
Vgs(th) (Max) @ Id 2V @ 30μA
Factory Lead Time 1 Week
Halogen Free Halogen Free
Mount Surface Mount
Input Capacitance (Ciss) (Max) @ Vds 2800pF @ 25V
Mounting Type Surface Mount
Current - Continuous Drain (Id) @ 25°C 40A Tc
Package / Case 8-PowerVDFN
Gate Charge (Qg) (Max) @ Vgs 52nC @ 10V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Number of Pins 8
Transistor Element Material SILICON
Vgs (Max) ±16V
Turn-Off Delay Time 20 ns
Operating Temperature -55°C~175°C TJ
Continuous Drain Current (ID) 40A
Packaging Tape & Reel (TR)
Gate to Source Voltage (Vgs) 16V
Max Dual Supply Voltage 40V
Drain to Source Breakdown Voltage 40V
Published 2004
See Relate Datesheet

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