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IPZ40N04S5L7R4ATMA1

IPZ40N04S5L7R4ATMA1 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available at Feilidi


  • Manufacturer: Infineon Technologies
  • Nocochips NO: 376-IPZ40N04S5L7R4ATMA1
  • Package: 8-PowerVDFN
  • Datasheet: PDF
  • Stock: 678
  • Description: IPZ40N04S5L7R4ATMA1 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available at Feilidi (Kg)

Details

Tags

Parameters
Factory Lead Time 1 Week
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-PowerVDFN
Number of Pins 8
Transistor Element Material SILICON
Operating Temperature -55°C~175°C TJ
Packaging Tape & Reel (TR)
Published 2013
Series Automotive, AEC-Q101, OptiMOS™
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin (Sn)
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form NO LEAD
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code not_compliant
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-PDSO-N3
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Number of Channels 1
Power Dissipation-Max 34W Tc
Operating Mode ENHANCEMENT MODE
Power Dissipation 34W
Case Connection DRAIN
Turn On Delay Time 2 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 7.4m Ω @ 20A, 10V
Vgs(th) (Max) @ Id 2V @ 10μA
Halogen Free Halogen Free
Input Capacitance (Ciss) (Max) @ Vds 920pF @ 25V
Current - Continuous Drain (Id) @ 25°C 40A Tc
Gate Charge (Qg) (Max) @ Vgs 17nC @ 10V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±16V
Turn-Off Delay Time 6 ns
Continuous Drain Current (ID) 40A
Gate to Source Voltage (Vgs) 16V
Max Dual Supply Voltage 40V
Drain to Source Breakdown Voltage 40V
Avalanche Energy Rating (Eas) 24 mJ
Max Junction Temperature (Tj) 175°C
Height 1.15mm
RoHS Status ROHS3 Compliant
Lead Free Contains Lead
See Relate Datesheet

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