Parameters | |
---|---|
Published | 1996 |
Part Status | Obsolete |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 8 |
ECCN Code | EAR99 |
Technology | CMOS |
Voltage - Supply | 10V~20V |
Terminal Position | DUAL |
Peak Reflow Temperature (Cel) | NOT SPECIFIED |
Number of Functions | 1 |
Supply Voltage | 15V |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
Base Part Number | IR2011 |
JESD-30 Code | R-PDIP-T8 |
Qualification Status | Not Qualified |
Input Type | Inverting |
Rise / Fall Time (Typ) | 35ns 20ns |
Interface IC Type | HALF BRIDGE BASED MOSFET DRIVER |
Channel Type | Independent |
Number of Drivers | 2 |
Output Peak Current Limit-Nom | 1A |
Driven Configuration | High-Side or Low-Side |
Gate Type | N-Channel MOSFET |
Current - Peak Output (Source, Sink) | 1A 1A |
High Side Driver | YES |
Logic Voltage - VIL, VIH | 0.7V 2.2V |
High Side Voltage - Max (Bootstrap) | 200V |
Height Seated (Max) | 5.33mm |
Length | 9.88mm |
RoHS Status | Non-RoHS Compliant |
Mounting Type | Through Hole |
Package / Case | 8-DIP (0.300, 7.62mm) |
Surface Mount | NO |
Operating Temperature | -40°C~150°C TJ |
Packaging | Tube |
The IR2011 is a high-speed, high-power MOSFET driver with separate high and low side referenced output channels. Down to 3.0V logic, logic inputs are compatible with normal CMOS or LSTTL output. A high pulse current buffer stage is used in the output drivers to reduce driver cross-conduction. The propagation delays are matched to make high-frequency applications easier to employ. The floating channel can be utilized to drive a high-side N-channel power MOSFET that operates at 200 volts. Ruggedized monolithic architecture is possible because to proprietary HVIC and latch immune CMOS technology.
Negative transient voltage tolerant, dV/dt immune
The supply voltage for gate drives ranges from 10 to 20 volts.
Low and high side channels that are independent
HIN/LIN active high input logic
Both channels are undervoltage locked.
Converters
DC motor control