IR2011PBF
| Parameters | |
|---|---|
| Factory Lead Time | 1 Week |
| Mount | Through Hole |
| Mounting Type | Through Hole |
| Package / Case | 8-DIP (0.300, 7.62mm) |
| Number of Pins | 8 |
| Operating Temperature | -40°C~150°C TJ |
| Packaging | Tube |
| Published | 1996 |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 8 |
| Termination | Through Hole |
| ECCN Code | EAR99 |
| Subcategory | MOSFET Drivers |
| Max Power Dissipation | 1W |
| Technology | CMOS |
| Voltage - Supply | 10V~20V |
| Terminal Position | DUAL |
| Number of Functions | 1 |
| Supply Voltage | 15V |
| Base Part Number | IR2011PBF |
| Number of Outputs | 2 |
| Output Voltage | 220V |
| Max Output Current | 1A |
| Power Supplies | 15V |
| Nominal Supply Current | 230μA |
| Power Dissipation | 1W |
| Output Current | 1A |
| Max Supply Current | 230μA |
| Propagation Delay | 80 ns |
| Input Type | Inverting |
| Turn On Delay Time | 20 ns |
| Max Output Voltage | 20V |
| Rise Time | 50ns |
| Fall Time (Typ) | 35 ns |
| Turn-Off Delay Time | 75 ns |
| Min Output Voltage | 10V |
| Rise / Fall Time (Typ) | 35ns 20ns |
| Interface IC Type | HALF BRIDGE BASED MOSFET DRIVER |
| Channel Type | Independent |
| Output Peak Current Limit-Nom | 1A |
| Driven Configuration | High-Side or Low-Side |
| Gate Type | N-Channel MOSFET |
| Current - Peak Output (Source, Sink) | 1A 1A |
| High Side Driver | YES |
| Logic Voltage - VIL, VIH | 0.7V 2.2V |
| High Side Voltage - Max (Bootstrap) | 200V |
| Height | 4.9276mm |
| Length | 10.8966mm |
| Width | 7.11mm |
| Radiation Hardening | No |
| REACH SVHC | No SVHC |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
IR2011PBF Overview
For greater flexibility, the 8-DIP (0.300, 7.62mm) package is adopted.Tube is the packaging method.Ideally, it should be mounted in the direction of Through Hole.When the supply voltage is 10V~20V it is able to demonstrate its superiority.This device is designed with a N-Channel MOSFET gate type.This device is allowed to operate in a temperature range of -40°C~150°C TJ.The input type for this program is Inverting.There are 8 terminations to form the base of its configuration.Under its base part number IR2011PBF, various related parts can be found.Mosfet driver is mounted using the Through Hole method.A total of 8 pins are available on the device.Specification is for 15V supply voltage operation.As its interface IC, HALF BRIDGE BASED MOSFET DRIVER is being employed.There is a maximum output current of 1A that can be achieved.There are several useful electronic components in this subcategory of MOSFET Drivers.Maximum (Bootstrap) voltage is 200V.There are 2 outputs integrated for its basis.The device is capable of delivering a current of 1A.1W dissipates maximum power without overheating, showing its maximum capability to transfer and conduct power loss.To ensure high stability, the supply current should be kept at 230μA.With its power supplies of 15V, it solves the power supply problems for diverse applications.The voltage it outputs is 220V.Mosfet driver ic is recommended to keep the maximum output voltage at 20V.
IR2011PBF Features
Embedded in the Tube package
Employing a gate type of N-Channel MOSFET
8 pins
High-side voltage - Max (Bootstrap) of 200V
Maximum power dissipation of 1W
IR2011PBF Applications
There are a lot of Infineon Technologies IR2011PBF gate drivers applications.
- Head-up and Head mounted displays
- General Purpose 3-Phase Inverter
- Isolated Supplies for Motor Control
- Line drivers
- UPS systems
- Commercial and agricultural vehicles (CAV)
- Industrial Power Supplies
- High-speed communications
- serial peripheral interface (SPI), I2C
- Solar power supplies
