IR2011S
| Parameters | |
|---|---|
| Mounting Type | Surface Mount |
| Package / Case | 8-SOIC (0.154, 3.90mm Width) |
| Surface Mount | YES |
| Operating Temperature | -40°C~150°C TJ |
| Packaging | Tube |
| Published | 1996 |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 8 |
| ECCN Code | EAR99 |
| Technology | CMOS |
| Voltage - Supply | 10V~20V |
| Terminal Position | DUAL |
| Terminal Form | GULL WING |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED |
| Number of Functions | 1 |
| Supply Voltage | 15V |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| Base Part Number | IR2011S |
| JESD-30 Code | R-PDSO-G8 |
| Qualification Status | Not Qualified |
| Input Type | Inverting |
| Rise / Fall Time (Typ) | 35ns 20ns |
| Interface IC Type | HALF BRIDGE BASED MOSFET DRIVER |
| Channel Type | Independent |
| Number of Drivers | 2 |
| Output Peak Current Limit-Nom | 1A |
| Driven Configuration | High-Side or Low-Side |
| Gate Type | N-Channel MOSFET |
| Current - Peak Output (Source, Sink) | 1A 1A |
| High Side Driver | YES |
| Logic Voltage - VIL, VIH | 0.7V 2.2V |
| High Side Voltage - Max (Bootstrap) | 200V |
| Height Seated (Max) | 1.75mm |
| Length | 4.9mm |
| Width | 3.9mm |
| RoHS Status | Non-RoHS Compliant |
IR2011S Overview
For greater flexibility, its 8-SOIC (0.154, 3.90mm Width) package is used.The packaging method is indicated by Tube.Gate drivers is configured wGate driversh 2 drivers.It's mounted on the way to Surface Mount.Gate drivers is able to show Gate driverss superiorGate driversy on the basis of a supply voltage of 10V~20V.Gate type N-Channel MOSFET is designed for it.This device can operate at temperatures up to -40°C~150°C TJ.The input type for this program is Inverting.It's configured with 8 terminations.You will find various related parts under the base part number IR2011S.The device is specifically designed to operate at 15V volts.Mosfet driver is equipped wMosfet driverh an interface chip HALF BRIDGE BASED MOSFET DRIVER.Ideally, the high-side voltage should not exceed 200V.
IR2011S Features
Embedded in the Tube package
2 drivers
Employing a gate type of N-Channel MOSFET
High-side voltage - Max (Bootstrap) of 200V
IR2011S Applications
There are a lot of Infineon Technologies IR2011S gate drivers applications.
- Portable computers
- Uninterruptible Power Supplies (UPS)
- RGB applications
- Telecom switch mode power supplies
- Portable Media Players
- 48 V to 12 V PoL Converters, 48 V to Low Voltage Bus Converter,
- High current laser/LED systems
- High power buffers
- LCD/LCoS/DLP portable and embedded pico projectors
- serial peripheral interface (SPI), I2C
