IR2011SPBF
| Parameters | |
|---|---|
| Terminal Finish | Matte Tin (Sn) |
| Subcategory | MOSFET Drivers |
| Max Power Dissipation | 625mW |
| Technology | CMOS |
| Voltage - Supply | 10V~20V |
| Terminal Position | DUAL |
| Terminal Form | GULL WING |
| Peak Reflow Temperature (Cel) | 260 |
| Number of Functions | 1 |
| Supply Voltage | 15V |
| Time@Peak Reflow Temperature-Max (s) | 30 |
| Base Part Number | IR2011SPBF |
| Number of Outputs | 2 |
| Output Voltage | 10V |
| Max Output Current | 1A |
| Power Supplies | 15V |
| Operating Supply Current | 230μA |
| Nominal Supply Current | 230μA |
| Power Dissipation | 625mW |
| Output Current | 1A |
| Max Supply Current | 230μA |
| Propagation Delay | 80 ns |
| Input Type | Inverting |
| Turn On Delay Time | 20 ns |
| Rise Time | 50ns |
| Fall Time (Typ) | 35 ns |
| Turn-Off Delay Time | 20 ns |
| Release Time | 60 ns |
| Rise / Fall Time (Typ) | 35ns 20ns |
| Interface IC Type | HALF BRIDGE BASED MOSFET DRIVER |
| Channel Type | Independent |
| Output Peak Current Limit-Nom | 1A |
| Driven Configuration | High-Side or Low-Side |
| Gate Type | N-Channel MOSFET |
| Current - Peak Output (Source, Sink) | 1A 1A |
| High Side Driver | YES |
| Logic Voltage - VIL, VIH | 0.7V 2.2V |
| High Side Voltage - Max (Bootstrap) | 200V |
| Height | 1.4986mm |
| Length | 4.9784mm |
| Width | 3.9878mm |
| Radiation Hardening | No |
| REACH SVHC | No SVHC |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
| Factory Lead Time | 1 Week |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | 8-SOIC (0.154, 3.90mm Width) |
| Number of Pins | 8 |
| Weight | 540.001716mg |
| Operating Temperature | -40°C~150°C TJ |
| Packaging | Tube |
| Published | 1996 |
| JESD-609 Code | e3 |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 2 (1 Year) |
| Number of Terminations | 8 |
| ECCN Code | EAR99 |
IR2011SPBF Overview
For greater flexibility, its 8-SOIC (0.154, 3.90mm Width) package is used.A packaging method of Tube is used.Its recommended mounting way is Surface Mount.In the absence of a power supply voltage of 10V~20V V, it is able to demonstrate its superiority.This device is designed with a N-Channel MOSFET gate type.Temperature range -40°C~150°C TJ is allowed for this device.Mosfet driver uses Inverting as Mosfet drivers input type.Initially, the configuration is composed of 8 terminations.Many related parts can be found under its base part number IR2011SPBF.Mounting the device requires Surface Mount.Devices have 8 pins available.With a supply voltage of 15V, it is designed to operate.There is an interface IC called HALF BRIDGE BASED MOSFET DRIVER that is employed in this device.1A is the maximum output current.Mosfet driver includes a number of useful electronic components in Mosfet drivers subcategory of MOSFET Drivers.Ideally, the high-side voltage should not exceed 200V.There are 2 outputs integrated for its basis.This device supports a current output of 1A at the output.625mW dissipates maximum power without overheating, showing its maximum capability to transfer and conduct power loss.Keeping the supply current at 230μA ensures greater stability.With its power supplies of 15V, it solves the power supply problems for diverse applications.10V is the output voltage.The power supply voltage for this device is set to 230μA.
IR2011SPBF Features
Embedded in the Tube package
Employing a gate type of N-Channel MOSFET
8 pins
High-side voltage - Max (Bootstrap) of 200V
Maximum power dissipation of 625mW
IR2011SPBF Applications
There are a lot of Infineon Technologies IR2011SPBF gate drivers applications.
- General Purpose 3-Phase Inverter
- PCMCIA applications
- Uninterruptible Power Supplies (UPS)
- Solar inverters
- Isolated switch mode power supplies (SMPS)
- High current laser/LED systems
- UPS systems
- Solar power supplies
- LCD/LCoS/DLP portable and embedded pico projectors
- Industrial Motor Inverter - Power Tools, Robotics
