IR2102PBF
| Parameters | |
|---|---|
| Factory Lead Time | 1 Week |
| Mount | Through Hole |
| Mounting Type | Through Hole |
| Package / Case | 8-DIP (0.300, 7.62mm) |
| Number of Pins | 8 |
| Operating Temperature | -40°C~150°C TJ |
| Packaging | Tube |
| Published | 1996 |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 8 |
| Termination | Through Hole |
| ECCN Code | EAR99 |
| Subcategory | MOSFET Drivers |
| Max Power Dissipation | 1W |
| Technology | CMOS |
| Voltage - Supply | 10V~20V |
| Terminal Position | DUAL |
| Number of Functions | 1 |
| Supply Voltage | 15V |
| Base Part Number | IR2102PBF |
| Number of Outputs | 2 |
| Output Voltage | 620V |
| Max Output Current | 360mA |
| Power Supplies | 15V |
| Nominal Supply Current | 270μA |
| Power Dissipation | 1W |
| Output Current | 130mA |
| Max Supply Current | 270μA |
| Propagation Delay | 220 ns |
| Input Type | Inverting |
| Turn On Delay Time | 160 ns |
| Max Output Voltage | 20V |
| Rise Time | 170ns |
| Fall Time (Typ) | 90 ns |
| Turn-Off Delay Time | 150 ns |
| Min Output Voltage | 10V |
| Rise / Fall Time (Typ) | 100ns 50ns |
| Channel Type | Independent |
| Output Peak Current Limit-Nom | 0.36A |
| Driven Configuration | Half-Bridge |
| Gate Type | IGBT, N-Channel MOSFET |
| Current - Peak Output (Source, Sink) | 210mA 360mA |
| High Side Driver | YES |
| Logic Voltage - VIL, VIH | 0.8V 3V |
| High Side Voltage - Max (Bootstrap) | 600V |
| Height | 4.9276mm |
| Length | 10.8966mm |
| Width | 7.112mm |
| Radiation Hardening | No |
| REACH SVHC | No SVHC |
| RoHS Status | ROHS3 Compliant |
IR2102PBF Overview
A higher degree of flexibility is achieved by adopting its 8-DIP (0.300, 7.62mm) package.Tube represents the packaging method.Through Hole is the way in which it is mounted.When the supply voltage is set to 10V~20V, it can demonstrate its superiority.Gate drivers is designed wGate driversh a gate type of IGBT, N-Channel MOSFET.In this device, temperatures must not exceed -40°C~150°C TJ.Inverting is the input type used in this program.8 terminations constitute its foundation.Numerous related parts can be found under its base part number IR2102PBF.The mount method is Through Hole.Mosfet driver is configured wMosfet driverh 8 pins when designing.The device is specifically designed to function with a supply voltage of 15V V.In the maximum case, the output current can be 360mA volts.There are several useful electronic components within its subcategory MOSFET Drivers.A high-side voltage can be set up to 600V (Bootstrap).The basis of the model has 2 outputs integrated.Mosfet gate drivers supports a current output of 130mA.Its maximum power dissipation of 1W shows its power loss capacity without overheating.Mosfet gate drivers is recommended that you keep the supply current at 270μA in order to achieve greater stabilMosfet gate driversy.With its 15V power supply, it provides power for diverse applications.When this voltage is produced, it is marked as 620V.At maximum output voltage, 20V should be used.
IR2102PBF Features
Embedded in the Tube package
Employing a gate type of IGBT, N-Channel MOSFET
8 pins
High-side voltage - Max (Bootstrap) of 600V
Maximum power dissipation of 1W
IR2102PBF Applications
There are a lot of Infineon Technologies IR2102PBF gate drivers applications.
- Industrial Power Supplies
- Refrigerator
- UPS systems
- Isolated Supplies for Motor Control
- AC-DC Inverters
- Digitally controlled power supplies
- Smart Phones
- Power factor correction (PFC) circuits
- Isolated Gate Driver Supplies
- Portable Media Players
