Parameters |
Factory Lead Time |
1 Week |
Mount |
Surface Mount |
Mounting Type |
Surface Mount |
Package / Case |
8-SOIC (0.154, 3.90mm Width) |
Number of Pins |
8 |
Operating Temperature |
-40°C~150°C TJ |
Packaging |
Tube |
Published |
1996 |
JESD-609 Code |
e3 |
Part Status |
Active |
Moisture Sensitivity Level (MSL) |
2 (1 Year) |
Number of Terminations |
8 |
ECCN Code |
EAR99 |
Terminal Finish |
Matte Tin (Sn) |
Subcategory |
MOSFET Drivers |
Max Power Dissipation |
625mW |
Technology |
CMOS |
Voltage - Supply |
10V~20V |
Terminal Position |
DUAL |
Terminal Form |
GULL WING |
Peak Reflow Temperature (Cel) |
260 |
Number of Functions |
1 |
Supply Voltage |
15V |
Time@Peak Reflow Temperature-Max (s) |
30 |
Base Part Number |
IR2102SPBF |
Number of Outputs |
2 |
Output Voltage |
620V |
Max Output Current |
360mA |
Power Supplies |
15V |
Nominal Supply Current |
150μA |
Power Dissipation |
625mW |
Output Current |
210mA |
Max Supply Current |
270μA |
Propagation Delay |
220 ns |
Input Type |
Inverting |
Turn On Delay Time |
160 ns |
Rise Time |
100ns |
Fall Time (Typ) |
50 ns |
Turn-Off Delay Time |
150 ns |
Rise / Fall Time (Typ) |
100ns 50ns |
Channel Type |
Independent |
Output Peak Current Limit-Nom |
0.36A |
Driven Configuration |
Half-Bridge |
Gate Type |
IGBT, N-Channel MOSFET |
Current - Peak Output (Source, Sink) |
210mA 360mA |
Max Junction Temperature (Tj) |
150°C |
High Side Driver |
YES |
Logic Voltage - VIL, VIH |
0.8V 3V |
High Side Voltage - Max (Bootstrap) |
600V |
Ambient Temperature Range High |
125°C |
Height |
1.75mm |
Length |
4.9784mm |
Width |
3.9878mm |
Radiation Hardening |
No |
REACH SVHC |
No SVHC |
RoHS Status |
ROHS3 Compliant |
Lead Free |
Lead Free |
IR2102SPBF Overview
For greater flexibility, its 8-SOIC (0.154, 3.90mm Width) package is used.A packaging method of Tube is indicated.The device is mounted in the direction of Surface Mount.When the supply voltage is set to 10V~20V, it can demonstrate its superiority.There is a gate type of IGBT, N-Channel MOSFET in this design.This device is allowed to operate in a temperature range of -40°C~150°C TJ.Inverting is used as the input type in this program.Initially, the configuration is composed of 8 terminations.Mosfet driver contains a variety of related parts under Mosfet drivers base part number IR2102SPBF.In this case, Surface Mount indicates how the device is to be mounted.The pins are configured with 8 when designing the chip.In addition, it is specifically designed to operate with a supply voltage of 15V.360mA is the maximum output current.There are various useful electronic components in its subcategory MOSFET Drivers.A boot strap voltage of 600V is the maximum possible high-side voltage.The basis of the model has 2 outputs integrated.Mosfet gate drivers can deliver a current of 210mA.Its maximum power dissipation of 625mW also demonstrates its maximum ability to transfer power without overheating.If you want a stable supply current, you should keep it at 270μA.Mosfet gate drivers solves the power supply problems for diverse applications based on Mosfet gate driverss power supplies of 15V.In this case, the voltage is 620V.
IR2102SPBF Features
Embedded in the Tube package
Employing a gate type of IGBT, N-Channel MOSFET
8 pins
High-side voltage - Max (Bootstrap) of 600V
Maximum power dissipation of 625mW
IR2102SPBF Applications
There are a lot of Infineon Technologies IR2102SPBF gate drivers applications.
- Commercial air-conditioning (CAC)
- Power factor correction (PFC) circuits
- Portable Navigation Devices
- Topologies
- Dual-Battery Systems
- Automotive Applications
- Motor Drives
- General Purpose 3-Phase Inverter
- 3-Phase Motor Inverter Driver
- Isolated Supplies for controller area network (CAN),