IR2110
| Parameters | |
|---|---|
| Mounting Type | Through Hole |
| Package / Case | 14-DIP (0.300, 7.62mm) |
| Surface Mount | NO |
| Operating Temperature | -40°C~150°C TJ |
| Packaging | Tube |
| Published | 1996 |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 14 |
| ECCN Code | EAR99 |
| Technology | CMOS |
| Voltage - Supply | 3.3V~20V |
| Terminal Position | DUAL |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED |
| Number of Functions | 1 |
| Supply Voltage | 15V |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| Base Part Number | IR2110 |
| JESD-30 Code | R-PDIP-T14 |
| Qualification Status | Not Qualified |
| Input Type | Non-Inverting |
| Rise / Fall Time (Typ) | 25ns 17ns |
| Channel Type | Independent |
| Number of Drivers | 2 |
| Turn On Time | 0.15 μs |
| Output Peak Current Limit-Nom | 2.5A |
| Driven Configuration | Half-Bridge |
| Gate Type | IGBT, N-Channel MOSFET |
| Current - Peak Output (Source, Sink) | 2A 2A |
| High Side Driver | YES |
| Logic Voltage - VIL, VIH | 6V 9.5V |
| High Side Voltage - Max (Bootstrap) | 500V |
| Height Seated (Max) | 5.33mm |
| Length | 19.305mm |
| RoHS Status | Non-RoHS Compliant |
IR2110 Gate Driver Description
The IR2110/IR2113 are high voltage, high speed power MOSFET and IGBT drivers with independent high and low side referenced output channels. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. Logic inputs are compatible with standard CMOS or LSTTL output, down to 3.3V logic. The output drivers feature a high pulse current buffer stage designed for minimum driver cross-conduction. Propagation delays are matched to simplify use in high frequency applications. The floating channel can be used to drive an N-channel power MOSFET or IGBT in the high side configuration which operates up to 500 or 600 volts.
IR2110 Gate Driver Features
Floating channel designed for bootstrap operation
Fully operational to +500V or +600V
Tolerant to negative transient voltage dV/dt immune
Gate drive supply range from 10 to 20V
Undervoltage lockout for both channels
3.3V logic compatible
Separate logic supply range from 3.3V to 20V Logic and power ground ±5V offset
CMOS Schmitt-triggered inputs with pull-down
Cycle by cycle edge-triggered shutdown logic
Matched propagation delay for both channels
Outputs in phase with inputs
IR2110 Gate Driver Application Notes
Current Control
Dual Forward Converters
Switched Reluctance Motor Drivers
Inductors
AC Motor Speed Control
IGBTs and MOSFETs
High-side P-Channel Devices
The IR2110/IR2113 are high voltage, high speed power MOSFET and IGBT drivers with independent high and low side referenced output channels. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. Logic inputs are compatible with standard CMOS or LSTTL output, down to 3.3V logic. The output drivers feature a high pulse current buffer stage designed for minimum driver cross-conduction. Propagation delays are matched to simplify use in high frequency applications. The floating channel can be used to drive an N-channel power MOSFET or IGBT in the high side configuration which operates up to 500 or 600 volts.
IR2110 Gate Driver Features
Floating channel designed for bootstrap operation
Fully operational to +500V or +600V
Tolerant to negative transient voltage dV/dt immune
Gate drive supply range from 10 to 20V
Undervoltage lockout for both channels
3.3V logic compatible
Separate logic supply range from 3.3V to 20V Logic and power ground ±5V offset
CMOS Schmitt-triggered inputs with pull-down
Cycle by cycle edge-triggered shutdown logic
Matched propagation delay for both channels
Outputs in phase with inputs
IR2110 Gate Driver Application Notes
Current Control
Dual Forward Converters
Switched Reluctance Motor Drivers
Inductors
AC Motor Speed Control
IGBTs and MOSFETs
High-side P-Channel Devices
