Parameters |
Factory Lead Time |
1 Week |
Mount |
Through Hole |
Mounting Type |
Through Hole |
Package / Case |
14-DIP (0.300, 7.62mm) |
Number of Pins |
14 |
Weight |
1.620005g |
Operating Temperature |
-40°C~150°C TJ |
Packaging |
Tube |
Published |
1996 |
JESD-609 Code |
e3 |
Part Status |
Active |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Number of Terminations |
14 |
Termination |
Through Hole |
ECCN Code |
EAR99 |
Type |
Integrated Circuit (IC) |
Terminal Finish |
Matte Tin (Sn) |
Subcategory |
MOSFET Drivers |
Max Power Dissipation |
1.6W |
Technology |
CMOS |
Voltage - Supply |
3.3V~20V |
Terminal Position |
DUAL |
Peak Reflow Temperature (Cel) |
250 |
Number of Functions |
1 |
Supply Voltage |
15V |
Time@Peak Reflow Temperature-Max (s) |
30 |
Base Part Number |
IR2110PBF |
Number of Outputs |
2 |
Output Voltage |
20V |
Max Output Current |
2A |
Operating Supply Voltage |
15V |
Operating Supply Current |
340μA |
Power Dissipation |
1.6W |
Output Current |
2.5A |
Max Supply Current |
340μA |
Propagation Delay |
150 ns |
Input Type |
Non-Inverting |
Turn On Delay Time |
10 ns |
Max Output Voltage |
20V |
Rise Time |
35ns |
Fall Time (Typ) |
25 ns |
Turn-Off Delay Time |
10 ns |
Min Output Voltage |
10V |
Rise / Fall Time (Typ) |
25ns 17ns |
Channel Type |
Independent |
Turn On Time |
0.15 μs |
Output Peak Current Limit-Nom |
2.5A |
Driven Configuration |
Half-Bridge |
Gate Type |
IGBT, N-Channel MOSFET |
Current - Peak Output (Source, Sink) |
2A 2A |
High Side Driver |
YES |
Logic Voltage - VIL, VIH |
6V 9.5V |
High Side Voltage - Max (Bootstrap) |
500V |
Height |
4.9276mm |
Length |
20.1676mm |
Width |
7.11mm |
Radiation Hardening |
No |
REACH SVHC |
No SVHC |
RoHS Status |
ROHS3 Compliant |
Lead Free |
Contains Lead, Lead Free |
IR2110PBF Overview
Its 14-DIP (0.300, 7.62mm) package is adopted for higher flexibility.Tube is the packaging method.There is a mounting bracket in the way of Through Hole.Gate drivers is able to show Gate driverss superiorGate driversy on the basis of a supply voltage of 3.3V~20V.Gate type IGBT, N-Channel MOSFET has been used in its design.This device can operate at temperatures up to -40°C~150°C TJ.The input type is Non-Inverting.The configuration starts with 14 terminations.Mosfet driver is possible to find various related parts under Mosfet drivers base part number IR2110PBF.The device is mounted using Through Hole.A total of 14 pins are available on the device.A supply voltage of 15V is required for operation.As a maximum, there is 2A limit to the output current.There are several useful electronic components within its subcategory MOSFET Drivers.High-side voltage - Max (Bootstrap) can be as low as 500V.The basis of this model has 2 outputs integrated.This device supports a current output of 2.5A at the output.Based on the maximum power dissipation of 1.6W, it is clear that it is capable of transferring and conducting power losses without becoming overheated.If you want a stable supply current, you should keep it at 340μA.In this case, it produces a voltage of 20V.Setting the operating supply voltage to 15V is recommended.The supply voltage is 340μA.A maximum voltage of 20V should be maintained for the output voltage.
IR2110PBF Features
Embedded in the Tube package
Employing a gate type of IGBT, N-Channel MOSFET
14 pins
High-side voltage - Max (Bootstrap) of 500V
Maximum power dissipation of 1.6W
IR2110PBF Applications
There are a lot of Infineon Technologies IR2110PBF gate drivers applications.
- Multicolor LED/laser displays
- Isolated switch mode power supplies (SMPS)
- Portable Media Players
- Motor Control
- DC/DC converters
- Refrigerator
- Broadcast equipment
- Portable Navigation Devices
- Smart Phones
- LCD/LCoS/DLP portable and embedded pico projectors