IR2110SPBF
| Parameters | |
|---|---|
| Factory Lead Time | 1 Week |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | 16-SOIC (0.295, 7.50mm Width) |
| Number of Pins | 16 |
| Operating Temperature | -40°C~150°C TJ |
| Packaging | Tube |
| Published | 1996 |
| JESD-609 Code | e3 |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 3 (168 Hours) |
| Number of Terminations | 16 |
| Termination | SMD/SMT |
| ECCN Code | EAR99 |
| Type | Integrated Circuit (IC) |
| Terminal Finish | Matte Tin (Sn) |
| Subcategory | MOSFET Drivers |
| Max Power Dissipation | 1.25W |
| Technology | CMOS |
| Voltage - Supply | 3.3V~20V |
| Terminal Position | DUAL |
| Terminal Form | GULL WING |
| Peak Reflow Temperature (Cel) | 260 |
| Number of Functions | 1 |
| Supply Voltage | 15V |
| Time@Peak Reflow Temperature-Max (s) | 30 |
| Base Part Number | IR2110SPBF |
| Number of Outputs | 2 |
| Output Voltage | 520V |
| Max Output Current | 2.5mA |
| Operating Supply Voltage | 15V |
| Nominal Supply Current | 180μA |
| Power Dissipation | 1.25W |
| Output Current | 2.5A |
| Max Supply Current | 340μA |
| Propagation Delay | 120 ns |
| Input Type | Non-Inverting |
| Turn On Delay Time | 120 ns |
| Max Output Voltage | 20V |
| Reference Voltage | 500V |
| Rise Time | 25ns |
| Fall Time (Typ) | 17 ns |
| Turn-Off Delay Time | 94 ns |
| Min Output Voltage | 10V |
| Rise / Fall Time (Typ) | 25ns 17ns |
| Channel Type | Independent |
| Turn On Time | 0.15 μs |
| Output Peak Current Limit-Nom | 2.5A |
| Driven Configuration | Half-Bridge |
| Gate Type | IGBT, N-Channel MOSFET |
| Current - Peak Output (Source, Sink) | 2A 2A |
| Max Junction Temperature (Tj) | 150°C |
| High Side Driver | YES |
| Logic Voltage - VIL, VIH | 6V 9.5V |
| Ambient Temperature Range High | 125°C |
| Height | 2.65mm |
| Length | 10.4902mm |
| Width | 7.5946mm |
| Radiation Hardening | No |
| REACH SVHC | No SVHC |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Contains Lead, Lead Free |
IR2110SPBF Description
The IR2110SPBF is a high voltage, high-speed power MOSFET and IGBT driver with independent high and low side referenced output channels. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. Logic inputs are compatible with standard CMOS or LSTTL output, down to 3.3V logic. The IGBT driver IR2110SPBF features a high pulse current buffer stage designed for minimum driver cross-conduction. Propagation delays are matched to simplify use in high-frequency applications. The floating channel can be used to drive an N-channel power MOSFET or IGBT in the high side configuration which operates up to 500 or 600 volts.
IR2110SPBF Features
Floating channel designed for bootstrap operation
Fully operational to +500 V
Fully operational to +600 V version available (IR2113S)
dV/dt immune
Gate drive supply range from 10 to 20 V
Undervoltage lockout for both channels
3.3 V logic compatible
Separate logic supply range from 3.3 V to 20 V
Logic and power ground + /- 5 V offset
CMOS Schmitt-triggered inputs with pull-down
Cycle by cycle edge-triggered shutdown logic
Matched propagation delay for both channels
Outputs in phase with inputs
IR2110SPBF Applications
micro-inverter
power optimizer
string inverter
central inverter
residential, small and large commercial, and utility-scale deployments.
