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IR2110SPBF

Surface Mount Tube Active EAR99 Gate Drivers ICs Non-Inverting 16-SOIC (0.295, 7.50mm Width) IR2110SPBF Half-Bridge


  • Manufacturer: Infineon Technologies
  • Nocochips NO: 376-IR2110SPBF
  • Package: 16-SOIC (0.295, 7.50mm Width)
  • Datasheet: PDF
  • Stock: 649
  • Description: Surface Mount Tube Active EAR99 Gate Drivers ICs Non-Inverting 16-SOIC (0.295, 7.50mm Width) IR2110SPBF Half-Bridge (Kg)

Details

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Parameters
Factory Lead Time 1 Week
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 16-SOIC (0.295, 7.50mm Width)
Number of Pins 16
Operating Temperature -40°C~150°C TJ
Packaging Tube
Published 1996
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 3 (168 Hours)
Number of Terminations 16
Termination SMD/SMT
ECCN Code EAR99
Type Integrated Circuit (IC)
Terminal Finish Matte Tin (Sn)
Subcategory MOSFET Drivers
Max Power Dissipation 1.25W
Technology CMOS
Voltage - Supply 3.3V~20V
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Number of Functions 1
Supply Voltage 15V
Time@Peak Reflow Temperature-Max (s) 30
Base Part Number IR2110SPBF
Number of Outputs 2
Output Voltage 520V
Max Output Current 2.5mA
Operating Supply Voltage 15V
Nominal Supply Current 180μA
Power Dissipation 1.25W
Output Current 2.5A
Max Supply Current 340μA
Propagation Delay 120 ns
Input Type Non-Inverting
Turn On Delay Time 120 ns
Max Output Voltage 20V
Reference Voltage 500V
Rise Time 25ns
Fall Time (Typ) 17 ns
Turn-Off Delay Time 94 ns
Min Output Voltage 10V
Rise / Fall Time (Typ) 25ns 17ns
Channel Type Independent
Turn On Time 0.15 μs
Output Peak Current Limit-Nom 2.5A
Driven Configuration Half-Bridge
Gate Type IGBT, N-Channel MOSFET
Current - Peak Output (Source, Sink) 2A 2A
Max Junction Temperature (Tj) 150°C
High Side Driver YES
Logic Voltage - VIL, VIH 6V 9.5V
Ambient Temperature Range High 125°C
Height 2.65mm
Length 10.4902mm
Width 7.5946mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Contains Lead, Lead Free

IR2110SPBF Description


The IR2110SPBF is a high voltage, high-speed power MOSFET and IGBT driver with independent high and low side referenced output channels. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. Logic inputs are compatible with standard CMOS or LSTTL output, down to 3.3V logic. The IGBT driver IR2110SPBF features a high pulse current buffer stage designed for minimum driver cross-conduction. Propagation delays are matched to simplify use in high-frequency applications. The floating channel can be used to drive an N-channel power MOSFET or IGBT in the high side configuration which operates up to 500 or 600 volts.



IR2110SPBF Features


  • Floating channel designed for bootstrap operation

  • Fully operational to +500 V

  • Fully operational to +600 V version available (IR2113S)

  • dV/dt immune

  • Gate drive supply range from 10 to 20 V

  • Undervoltage lockout for both channels

  • 3.3 V logic compatible

  • Separate logic supply range from 3.3 V to 20 V

  • Logic and power ground + /- 5 V offset

  • CMOS Schmitt-triggered inputs with pull-down

  • Cycle by cycle edge-triggered shutdown logic

  • Matched propagation delay for both channels

  • Outputs in phase with inputs



IR2110SPBF Applications


  • micro-inverter 

  • power optimizer

  • string inverter 

  • central inverter 

  • residential, small and large commercial, and utility-scale deployments.


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