IR2111PBF
| Parameters | |
|---|---|
| Factory Lead Time | 1 Week |
| Mount | Through Hole |
| Mounting Type | Through Hole |
| Package / Case | 8-DIP (0.300, 7.62mm) |
| Number of Pins | 8 |
| Operating Temperature | -40°C~150°C TJ |
| Packaging | Tube |
| Published | 1996 |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 8 |
| ECCN Code | EAR99 |
| Subcategory | MOSFET Drivers |
| Max Power Dissipation | 1W |
| Technology | CMOS |
| Voltage - Supply | 10V~20V |
| Terminal Position | DUAL |
| Number of Functions | 1 |
| Supply Voltage | 15V |
| Base Part Number | IR2111PBF |
| Number of Outputs | 2 |
| Output Voltage | 620V |
| Max Output Current | 500mA |
| Power Supplies | 15V |
| Nominal Supply Current | 180μA |
| Power Dissipation | 1W |
| Output Current | 200mA |
| Max Supply Current | 180μA |
| Propagation Delay | 950 ns |
| Input Type | Non-Inverting |
| Turn On Delay Time | 750 ns |
| Max Output Voltage | 20V |
| Rise Time | 130ns |
| Fall Time (Typ) | 65 ns |
| Turn-Off Delay Time | 150 ns |
| Min Output Voltage | 10V |
| Rise / Fall Time (Typ) | 80ns 40ns |
| Channel Type | Synchronous |
| Turn On Time | 0.95 μs |
| Output Peak Current Limit-Nom | 0.5A |
| Driven Configuration | Half-Bridge |
| Gate Type | IGBT, N-Channel MOSFET |
| Current - Peak Output (Source, Sink) | 250mA 500mA |
| High Side Driver | YES |
| Logic Voltage - VIL, VIH | 8.3V 12.6V |
| High Side Voltage - Max (Bootstrap) | 600V |
| Height | 4.9276mm |
| Length | 10.8966mm |
| Width | 7.11mm |
| Radiation Hardening | No |
| REACH SVHC | No SVHC |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
IR2111PBF Overview
Its 8-DIP (0.300, 7.62mm) package is adopted for higher flexibility.Tube is the form of the package.Through Hole is mounted in the way.In the absence of a 10V~20V supply voltage, its superiority can be demonstrated.This gate type has a IGBT, N-Channel MOSFET design.This device can operate at temperatures up to -40°C~150°C TJ.Non-Inverting is used as the input type.As a result of its configuration, it contains a maximum of 8 terminations.The base part number IR2111PBF refers to a number of related parts.The mount method is Through Hole.As a result, it is configured with 8 pins when it is designed.In order to operate, a voltage of 15V has to be applied.In the maximum case, the output current can be 500mA volts.Its subcategory of MOSFET Drivers contains various useful electronic components.Mosfet driver is possible to set the high-side voltage - Max (Bootstrap) to 600V.Mosfet driver has been integrated wMosfet driverh a total of 2 outputs for Mosfet drivers basis.Mosfet driver supports an output current of 200mA.Its maximum power dissipation of 1W shows its power loss capacity without overheating.The supply current should be kept at 180μA to ensure higher stability.Mosfet gate drivers solves the power supply problems for diverse applications based on Mosfet gate driverss power supplies of 15V.A voltage of 620V is output by this device.In order to maintain the maximum output voltage, it must be set at 20V.
IR2111PBF Features
Embedded in the Tube package
Employing a gate type of IGBT, N-Channel MOSFET
8 pins
High-side voltage - Max (Bootstrap) of 600V
Maximum power dissipation of 1W
IR2111PBF Applications
There are a lot of Infineon Technologies IR2111PBF gate drivers applications.
- DC/DC converters
- Driving GaN Power Transistors used in Full or Half?Bridge, LLC,
- Welding
- Active filtering
- High frequency line drivers
- High-speed communications
- High-voltage isolated DC-DC converters
- Uninterruptible Power Supplies (UPS)
- Portable computers
- Commercial air-conditioning (CAC)
