IR2111S
| Parameters | |
|---|---|
| Mounting Type | Surface Mount |
| Package / Case | 8-SOIC (0.154, 3.90mm Width) |
| Surface Mount | YES |
| Operating Temperature | -40°C~150°C TJ |
| Packaging | Tube |
| Published | 1996 |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 8 |
| ECCN Code | EAR99 |
| Technology | CMOS |
| Voltage - Supply | 10V~20V |
| Terminal Position | DUAL |
| Terminal Form | GULL WING |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED |
| Number of Functions | 1 |
| Supply Voltage | 15V |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| Base Part Number | IR2111S |
| JESD-30 Code | R-PDSO-G8 |
| Qualification Status | Not Qualified |
| Input Type | Non-Inverting |
| Rise / Fall Time (Typ) | 80ns 40ns |
| Channel Type | Synchronous |
| Number of Drivers | 2 |
| Turn On Time | 0.95 μs |
| Output Peak Current Limit-Nom | 0.5A |
| Driven Configuration | Half-Bridge |
| Gate Type | IGBT, N-Channel MOSFET |
| Current - Peak Output (Source, Sink) | 250mA 500mA |
| High Side Driver | YES |
| Logic Voltage - VIL, VIH | 8.3V 12.6V |
| Turn Off Time | 0.18 μs |
| High Side Voltage - Max (Bootstrap) | 600V |
| Height Seated (Max) | 1.75mm |
| Length | 4.9mm |
| Width | 3.9mm |
| RoHS Status | Non-RoHS Compliant |
IR2111S Description
The IR2111(S) is a high-voltage, high-speed power MOSFET and IGBT driver for halfbridge applications with dependent high and low side referenced output channels. Ruggedized monolithic architecture is possible because to proprietary HVIC and latch immune CMOS technology. Standard CMOS outputs are compatible with logic input. A high pulse current buffer stage is used in the output drivers to reduce driver cross-conduction. To prevent shoot-through in the output half-bridge, internal deadtime is given. The floating channel can be utilized to drive a 600-volt N-channel power MOSFET or IGBT in a high-side setup.
IR2111S Features
? Floating channel designed for bootstrap operation
Fully operational to +600V
Tolerant to negative transient voltage
dV/dt immune
? Gate drive supply range from 10 to 20V
? Undervoltage lockout for both channels
? CMOS Schmitt-triggered inputs with pull-down
? Matched propagation delay for both channels
? Internally set deadtime
? High side output in phase with input
? Also available LEAD-FREE
IR2111S Applications
? Consumer
? Industrial heating and welding
? Motor control and drives
? Power Management (SMPS) - Reference Design
? Robotics
The IR2111(S) is a high-voltage, high-speed power MOSFET and IGBT driver for halfbridge applications with dependent high and low side referenced output channels. Ruggedized monolithic architecture is possible because to proprietary HVIC and latch immune CMOS technology. Standard CMOS outputs are compatible with logic input. A high pulse current buffer stage is used in the output drivers to reduce driver cross-conduction. To prevent shoot-through in the output half-bridge, internal deadtime is given. The floating channel can be utilized to drive a 600-volt N-channel power MOSFET or IGBT in a high-side setup.
IR2111S Features
? Floating channel designed for bootstrap operation
Fully operational to +600V
Tolerant to negative transient voltage
dV/dt immune
? Gate drive supply range from 10 to 20V
? Undervoltage lockout for both channels
? CMOS Schmitt-triggered inputs with pull-down
? Matched propagation delay for both channels
? Internally set deadtime
? High side output in phase with input
? Also available LEAD-FREE
IR2111S Applications
? Consumer
? Industrial heating and welding
? Motor control and drives
? Power Management (SMPS) - Reference Design
? Robotics
