IR2111SPBF
| Parameters | |
|---|---|
| Number of Pins | 8 |
| Operating Temperature | -40°C~150°C TJ |
| Packaging | Tube |
| Published | 1996 |
| JESD-609 Code | e3 |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 2 (1 Year) |
| Number of Terminations | 8 |
| Termination | SMD/SMT |
| ECCN Code | EAR99 |
| Terminal Finish | Matte Tin (Sn) |
| Subcategory | MOSFET Drivers |
| Max Power Dissipation | 625mW |
| Technology | CMOS |
| Voltage - Supply | 10V~20V |
| Terminal Position | DUAL |
| Terminal Form | GULL WING |
| Number of Functions | 1 |
| Supply Voltage | 15V |
| Base Part Number | IR2111SPBF |
| Number of Outputs | 2 |
| Output Voltage | 620V |
| Max Output Current | 500mA |
| Power Supplies | 15V |
| Nominal Supply Current | 180μA |
| Power Dissipation | 625mW |
| Output Current | 200mA |
| Max Supply Current | 180μA |
| Propagation Delay | 950 ns |
| Input Type | Non-Inverting |
| Turn On Delay Time | 750 ns |
| Max Output Voltage | 20V |
| Rise Time | 130ns |
| Fall Time (Typ) | 65 ns |
| Turn-Off Delay Time | 150 ns |
| Min Output Voltage | 10V |
| Rise / Fall Time (Typ) | 80ns 40ns |
| Channel Type | Synchronous |
| Turn On Time | 0.95 μs |
| Output Peak Current Limit-Nom | 0.5A |
| Driven Configuration | Half-Bridge |
| Gate Type | IGBT, N-Channel MOSFET |
| Current - Peak Output (Source, Sink) | 250mA 500mA |
| High Side Driver | YES |
| Logic Voltage - VIL, VIH | 8.3V 12.6V |
| High Side Voltage - Max (Bootstrap) | 600V |
| Height | 1.4986mm |
| Length | 4.9784mm |
| Width | 3.9878mm |
| Radiation Hardening | No |
| REACH SVHC | No SVHC |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
| Factory Lead Time | 1 Week |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | 8-SOIC (0.154, 3.90mm Width) |
IR2111SPBF Overview
Its 8-SOIC (0.154, 3.90mm Width) package provides greater flexibility.There is a package in the form of Tube.In the direction of Surface Mount, gate drivers is mounted.In the absence of a 10V~20V supply voltage, its superiority can be demonstrated.A gate type of IGBT, N-Channel MOSFET is used in its design.Temperature range -40°C~150°C TJ is allowed for this device.Mosfet driver accepts input of type Non-Inverting.The configuration starts with 8 terminations.The base part number IR2111SPBF refers to a number of related parts.The device is mounted with Surface Mount.The pins are configured with 8 when designing the chip.A voltage of 15V is required for its operation.There is an output current limit of 500mA for this device.There are various useful electronic components in its subcategory MOSFET Drivers.Maximum (Bootstrap) voltage is 600V.For its basis, 2 outputs are integrated.The output current supported by the device is 200mA.Having the maximum power dissipation of 625mW indicates its maximum capacity to conduct power losses without overheating.If you want a stable supply current, you should keep it at 180μA.The power supply of 15V is able to solve the power supply problems for a wide variety of applications.Mosfet gate drivers produces a voltage of 620V.A maximum output voltage of 20V should be maintained.
IR2111SPBF Features
Embedded in the Tube package
Employing a gate type of IGBT, N-Channel MOSFET
8 pins
High-side voltage - Max (Bootstrap) of 600V
Maximum power dissipation of 625mW
IR2111SPBF Applications
There are a lot of Infineon Technologies IR2111SPBF gate drivers applications.
- 3-Phase Motor Inverter Driver
- High power buffers
- Uninterruptible Power Supplies (UPS)
- Industrial motor drives - compact, standard, premium, servo drives
- Smart Phones
- LCD/LCoS/DLP portable and embedded pico projectors
- AC-DC Inverters
- Driving GaN Power Transistors used in Full or Half?Bridge, LLC,
- Motor Controls
- High-speed communications
