Parameters |
Mounting Type |
Through Hole |
Package / Case |
16-DIP (0.300, 7.62mm), 14 Leads |
Operating Temperature |
-40°C~150°C TJ |
Packaging |
Tube |
Published |
2005 |
Part Status |
Obsolete |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Voltage - Supply |
10V~20V |
Reach Compliance Code |
compliant |
Base Part Number |
IR2112-2PBF |
Input Type |
Non-Inverting |
Rise / Fall Time (Typ) |
80ns 40ns |
Interface IC Type |
HALF BRIDGE BASED MOSFET DRIVER |
Channel Type |
Independent |
Number of Drivers |
2 |
Driven Configuration |
High-Side or Low-Side |
Gate Type |
IGBT, N-Channel MOSFET |
Current - Peak Output (Source, Sink) |
250mA 500mA |
Logic Voltage - VIL, VIH |
6V 9.5V |
High Side Voltage - Max (Bootstrap) |
600V |
IR2112-2PBF Overview
For greater flexibility, its 16-DIP (0.300, 7.62mm), 14 Leads package is used.Tube is the form of the package.Configuration is based on 2 drivers.Its recommended mounting way is Through Hole.Using a 10V~20V supply voltage, gate drivers is capable of demonstrating Gate driverss superiorGate driversy.A gate type of IGBT, N-Channel MOSFET has been used in its design.This device is allowed to operate in a temperature range of -40°C~150°C TJ.A type of Non-Inverting is used for input in this program.Mosfet driver contains a variety of related parts under Mosfet drivers base part number IR2112-2PBF.There is an interface IC called HALF BRIDGE BASED MOSFET DRIVER that is employed in this device.A high-side voltage can be set up to 600V (Bootstrap).
IR2112-2PBF Features
Embedded in the Tube package
2 drivers
Employing a gate type of IGBT, N-Channel MOSFET
High-side voltage - Max (Bootstrap) of 600V
IR2112-2PBF Applications
There are a lot of Infineon Technologies IR2112-2PBF gate drivers applications.
- Welding
- Commercial air-conditioning (CAC)
- Portable computers
- Isolated Gate Driver Supplies
- Industrial Power Supplies
- Smart Phones
- Solar power supplies
- Refrigerator
- Industrial Modules
- High-voltage isolated DC-DC converters