IR2117
| Parameters | |
|---|---|
| Mounting Type | Through Hole |
| Package / Case | 8-DIP (0.300, 7.62mm) |
| Surface Mount | NO |
| Operating Temperature | -40°C~150°C TJ |
| Packaging | Tube |
| Published | 1996 |
| JESD-609 Code | e0 |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 8 |
| ECCN Code | EAR99 |
| Terminal Finish | Tin/Lead (Sn/Pb) |
| Technology | CMOS |
| Voltage - Supply | 10V~20V |
| Terminal Position | DUAL |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED |
| Number of Functions | 1 |
| Supply Voltage | 15V |
| Terminal Pitch | 2.54mm |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| Base Part Number | IR2117 |
| JESD-30 Code | R-PDIP-T8 |
| Qualification Status | Not Qualified |
| Input Type | Non-Inverting |
| Rise / Fall Time (Typ) | 80ns 40ns |
| Interface IC Type | BUFFER OR INVERTER BASED MOSFET DRIVER |
| Channel Type | Single |
| Number of Drivers | 1 |
| Turn On Time | 0.2 μs |
| Output Peak Current Limit-Nom | 0.5A |
| Driven Configuration | High-Side |
| Gate Type | IGBT, N-Channel MOSFET |
| Current - Peak Output (Source, Sink) | 250mA 500mA |
| High Side Driver | YES |
| Logic Voltage - VIL, VIH | 6V 9.5V |
| High Side Voltage - Max (Bootstrap) | 600V |
| Height Seated (Max) | 5.33mm |
| Length | 9.88mm |
| Width | 7.62mm |
| RoHS Status | Non-RoHS Compliant |
IR2117 Description
IR2117 belongs to the family of single-channel power MOSFET and IGBT drivers with high voltage and high speed, which is manufactured by Infineon Technologies based on proprietary HVIC and latch immune CMOS technologies. These technologies are able to make ruggedized monolithic construction possible. Its floating channel is designed for the bootstrap operation of N-channel power MOSFETs or IGBTs.
IR2117 Features
Lead-free
A high pulse current buffer stage
Ruggedized monolithic construction
Available in the 8-Lead PDIP package
Proprietary HVIC and latch immune CMOS technologies
IR2117 Applications
Driving MOSFET
Driving IGBT
