Parameters |
Factory Lead Time |
1 Week |
Mount |
Surface Mount |
Mounting Type |
Surface Mount |
Package / Case |
8-SOIC (0.154, 3.90mm Width) |
Number of Pins |
8 |
Operating Temperature |
-40°C~150°C TJ |
Packaging |
Tube |
Published |
1996 |
JESD-609 Code |
e3 |
Part Status |
Active |
Moisture Sensitivity Level (MSL) |
2 (1 Year) |
Number of Terminations |
8 |
ECCN Code |
EAR99 |
Terminal Finish |
Matte Tin (Sn) |
Subcategory |
MOSFET Drivers |
Max Power Dissipation |
625mW |
Technology |
CMOS |
Voltage - Supply |
10V~20V |
Terminal Position |
DUAL |
Terminal Form |
GULL WING |
Peak Reflow Temperature (Cel) |
260 |
Number of Functions |
1 |
Supply Voltage |
15V |
Time@Peak Reflow Temperature-Max (s) |
30 |
Base Part Number |
IR2118SPBF |
Number of Outputs |
1 |
Output Voltage |
20V |
Max Output Current |
500mA |
Nominal Supply Current |
340μA |
Power Dissipation |
625mW |
Output Current |
250mA |
Max Supply Current |
340μA |
Propagation Delay |
200 ns |
Input Type |
Inverting |
Turn On Delay Time |
125 ns |
Rise Time |
130ns |
Fall Time (Typ) |
65 ns |
Turn-Off Delay Time |
65 ns |
Rise / Fall Time (Typ) |
80ns 40ns |
Interface IC Type |
BUFFER OR INVERTER BASED MOSFET DRIVER |
Channel Type |
Single |
Turn On Time |
0.2 μs |
Output Peak Current Limit-Nom |
0.5A |
Driven Configuration |
High-Side |
Gate Type |
IGBT, N-Channel MOSFET |
Current - Peak Output (Source, Sink) |
250mA 500mA |
High Side Driver |
YES |
Logic Voltage - VIL, VIH |
6V 9.5V |
High Side Voltage - Max (Bootstrap) |
600V |
Height |
1.4986mm |
Length |
4.9784mm |
Width |
3.9878mm |
Radiation Hardening |
No |
REACH SVHC |
No SVHC |
RoHS Status |
ROHS3 Compliant |
Lead Free |
Contains Lead, Lead Free |
IR2118SPBF Overview
A higher level of flexibility is provided by its 8-SOIC (0.154, 3.90mm Width) package.Tube is the packaging method.The device is mounted in the direction of Surface Mount.When the supply voltage is set to 10V~20V, it can demonstrate its superiority.Gate drivers is designed wGate driversh a gate type of IGBT, N-Channel MOSFET.There is a temperature range for this device of -40°C~150°C TJ.Input type of Inverting is used.As a result of its configuration, it contains a maximum of 8 terminations.There are various related parts under its base part number IR2118SPBF.Surface Mount is the way it takes to mount the device.At the time of design, it is configured with 8 pins.Mosfet driver is specifically designed to opeate wMosfet driverh a supply voltage of 15V.The interface chip of the system is BUFFER OR INVERTER BASED MOSFET DRIVER.500mA is the maximum output current.There are several useful electronic components found in its subcategory of MOSFET Drivers.Mosfet driver is possible to set the high-side voltage - Max (Bootstrap) to 600V.There are 1 outputs integrated for its basis.This device supports a current output of 250mA at the output.Its maximum power dissipation of 625mW also demonstrates its maximum ability to transfer power without overheating.In order to ensure greater stability, it is recommended to keep the supply current at 340μA.In this case, it outputs 20V voltage.
IR2118SPBF Features
Embedded in the Tube package
Employing a gate type of IGBT, N-Channel MOSFET
8 pins
High-side voltage - Max (Bootstrap) of 600V
Maximum power dissipation of 625mW
IR2118SPBF Applications
There are a lot of Infineon Technologies IR2118SPBF gate drivers applications.
- Welding
- Isolated switch mode power supplies (SMPS)
- Industrial motor drives - compact, standard, premium, servo drives
- Dual-Battery Systems
- High power buffers
- Motor Drives
- Isolated Gate Driver Supplies
- High-voltage isolated DC-DC converters
- Industrial Power Supplies
- Pulse transformer drivers