IR21271PBF
| Parameters | |
|---|---|
| Factory Lead Time | 1 Week |
| Mount | Through Hole |
| Mounting Type | Through Hole |
| Package / Case | 8-DIP (0.300, 7.62mm) |
| Number of Pins | 8 |
| Operating Temperature | -40°C~150°C TJ |
| Packaging | Tube |
| Published | 1996 |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 8 |
| Termination | SMD/SMT |
| ECCN Code | EAR99 |
| Resistance | 125Ohm |
| Subcategory | MOSFET Drivers |
| Max Power Dissipation | 1W |
| Technology | CMOS |
| Voltage - Supply | 9V~20V |
| Terminal Position | DUAL |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED |
| Number of Functions | 1 |
| Supply Voltage | 15V |
| Terminal Pitch | 2.54mm |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| Base Part Number | IR21271PBF |
| Number of Outputs | 1 |
| Qualification Status | Not Qualified |
| Output Voltage | 20V |
| Max Output Current | 500mA |
| Operating Supply Voltage | 18V |
| Nominal Supply Current | 120μA |
| Power Dissipation | 1W |
| Output Current | 200mA |
| Propagation Delay | 250 ns |
| Input Type | Non-Inverting |
| Turn On Delay Time | 250 ns |
| Max Output Voltage | 20V |
| Rise Time | 130ns |
| Fall Time (Typ) | 65 ns |
| Turn-Off Delay Time | 200 ns |
| Min Output Voltage | 9V |
| Rise / Fall Time (Typ) | 80ns 40ns |
| Interface IC Type | BUFFER OR INVERTER BASED MOSFET DRIVER |
| Channel Type | Single |
| Turn On Time | 0.25 μs |
| Output Peak Current Limit-Nom | 0.5A |
| Driven Configuration | High-Side or Low-Side |
| Gate Type | IGBT, N-Channel MOSFET |
| Current - Peak Output (Source, Sink) | 250mA 500mA |
| High Side Driver | YES |
| Logic Voltage - VIL, VIH | 0.8V 3V |
| Turn Off Time | 0.2 μs |
| High Side Voltage - Max (Bootstrap) | 600V |
| Height | 4.9276mm |
| Length | 10.8966mm |
| Width | 7.11mm |
| REACH SVHC | No SVHC |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
IR21271PBF Overview
Its 8-DIP (0.300, 7.62mm) package is adopted for higher flexibility.Tube is the form of the package.Gate drivers is mounted in the way of Through Hole.In the absence of a power supply voltage of 9V~20V V, it is able to demonstrate its superiority.Gate drivers is designed wGate driversh a gate type of IGBT, N-Channel MOSFET.This device is allowed to operate in a temperature range of -40°C~150°C TJ.Non-Inverting is used as the input type in this program.Mosfet driver is based on 8 terminations.Mosfet driver is possible to find various related parts under Mosfet drivers base part number IR21271PBF.The device is mounted using Through Hole.A total of 8 pins are available on the device.A voltage of 15V is required for its operation.In this case, BUFFER OR INVERTER BASED MOSFET DRIVER serves as the interface IC.There is a maximum output current of 500mA.Within this subcategory of MOSFET Drivers, there are several useful electronic components.A high-side voltage can be set up to 600V (Bootstrap).For its basis, there are 1 outputs integrated.Mosfet driver supports an output current of 200mA.Having the maximum power dissipation of 1W indicates its maximum capacity to conduct power losses without overheating.In this case, it outputs 20V voltage.Mosfet gate drivers is recommended that the operating voltage of the supply be set at 18V.With a resistance of 125Ohm, it operates.Mosfet driver ic is recommended that the maximum output voltage remain at 20V.
IR21271PBF Features
Embedded in the Tube package
Employing a gate type of IGBT, N-Channel MOSFET
8 pins
High-side voltage - Max (Bootstrap) of 600V
Maximum power dissipation of 1W
Resistance of 125Ohm
IR21271PBF Applications
There are a lot of Infineon Technologies IR21271PBF gate drivers applications.
- Broadcast equipment
- Portable Navigation Devices
- AC-DC Inverters
- High-speed communications
- High frequency line drivers
- RGB applications
- Motor Drives
- Solar inverters
- Commercial air-conditioning (CAC)
- High-voltage isolated DC-DC converters
