IRF1010NSTRRPBF
| Parameters | |
|---|---|
| Case Connection | DRAIN |
| FET Type | N-Channel |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 11m Ω @ 43A, 10V |
| Vgs(th) (Max) @ Id | 4V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 3210pF @ 25V |
| Current - Continuous Drain (Id) @ 25°C | 85A Tc |
| Gate Charge (Qg) (Max) @ Vgs | 120nC @ 10V |
| Drain to Source Voltage (Vdss) | 55V |
| Drive Voltage (Max Rds On,Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Mounting Type | Surface Mount |
| Drain Current-Max (Abs) (ID) | 75A |
| Package / Case | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
| Drain-source On Resistance-Max | 0.011Ohm |
| Pulsed Drain Current-Max (IDM) | 290A |
| Surface Mount | YES |
| DS Breakdown Voltage-Min | 55V |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~175°C TJ |
| Avalanche Energy Rating (Eas) | 250 mJ |
| RoHS Status | ROHS3 Compliant |
| Packaging | Tape & Reel (TR) |
| Published | 2001 |
| Series | HEXFET® |
| JESD-609 Code | e3 |
| Part Status | Not For New Designs |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 2 |
| ECCN Code | EAR99 |
| Terminal Finish | Matte Tin (Sn) - with Nickel (Ni) barrier |
| Additional Feature | AVALANCHE RATED, HIGH RELIABILITY, ULTRA LOW RESISTANCE |
| Subcategory | FET General Purpose Power |
| Technology | MOSFET (Metal Oxide) |
| Terminal Position | SINGLE |
| Terminal Form | GULL WING |
| Peak Reflow Temperature (Cel) | 260 |
| Time@Peak Reflow Temperature-Max (s) | 30 |
| JESD-30 Code | R-PSSO-G2 |
| Qualification Status | Not Qualified |
| Number of Elements | 1 |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| Power Dissipation-Max | 180W Tc |
| Operating Mode | ENHANCEMENT MODE |
See Relate Datesheet
