IRF1324S-7PPBF
| Parameters | |
|---|---|
| Rise Time | 240ns |
| Drive Voltage (Max Rds On,Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Fall Time (Typ) | 93 ns |
| Turn-Off Delay Time | 86 ns |
| Continuous Drain Current (ID) | 429A |
| Threshold Voltage | 4V |
| Gate to Source Voltage (Vgs) | 20V |
| Drain Current-Max (Abs) (ID) | 240A |
| Drain to Source Breakdown Voltage | 24V |
| Dual Supply Voltage | 24V |
| Avalanche Energy Rating (Eas) | 230 mJ |
| Recovery Time | 107 ns |
| Nominal Vgs | 4 V |
| Height | 4.5466mm |
| Length | 10.795mm |
| Width | 8.15mm |
| Radiation Hardening | No |
| REACH SVHC | No SVHC |
| RoHS Status | RoHS Compliant |
| Lead Free | Lead Free |
| Contact Plating | Tin |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | TO-263-7, D2Pak (6 Leads + Tab), TO-263CB |
| Number of Pins | 7 |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~175°C TJ |
| Packaging | Tube |
| Published | 2006 |
| Series | HEXFET® |
| JESD-609 Code | e3 |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 6 |
| Termination | SMD/SMT |
| ECCN Code | EAR99 |
| Subcategory | FET General Purpose Power |
| Voltage - Rated DC | 24V |
| Technology | MOSFET (Metal Oxide) |
| Terminal Form | GULL WING |
| Peak Reflow Temperature (Cel) | 260 |
| Current Rating | 429A |
| Time@Peak Reflow Temperature-Max (s) | 30 |
| JESD-30 Code | R-PSSO-G6 |
| Number of Elements | 1 |
| Power Dissipation-Max | 300W Tc |
| Element Configuration | Single |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 300W |
| Case Connection | DRAIN |
| Turn On Delay Time | 19 ns |
| FET Type | N-Channel |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 1m Ω @ 160A, 10V |
| Vgs(th) (Max) @ Id | 4V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 7700pF @ 19V |
| Current - Continuous Drain (Id) @ 25°C | 240A Tc |
| Gate Charge (Qg) (Max) @ Vgs | 252nC @ 10V |
See Relate Datesheet
