Parameters | |
---|---|
Transistor Element Material | SILICON |
Threshold Voltage | 4V |
Operating Temperature | -55°C~175°C TJ |
JEDEC-95 Code | TO-220AB |
Packaging | Tube |
Gate to Source Voltage (Vgs) | 20V |
Drain Current-Max (Abs) (ID) | 75A |
Published | 2003 |
Drain to Source Breakdown Voltage | 40V |
Series | HEXFET® |
Pulsed Drain Current-Max (IDM) | 808A |
Dual Supply Voltage | 40V |
Part Status | Active |
Avalanche Energy Rating (Eas) | 620 mJ |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Recovery Time | 117 ns |
Number of Terminations | 3 |
Termination | Through Hole |
Max Junction Temperature (Tj) | 175°C |
Nominal Vgs | 4 V |
ECCN Code | EAR99 |
Height | 19.8mm |
Length | 10.668mm |
Resistance | 4mOhm |
Width | 4.826mm |
Additional Feature | AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE |
Radiation Hardening | No |
REACH SVHC | No SVHC |
Subcategory | FET General Purpose Power |
RoHS Status | ROHS3 Compliant |
Lead Free | Lead Free |
Voltage - Rated DC | 40V |
Technology | MOSFET (Metal Oxide) |
Current Rating | 162A |
Lead Pitch | 2.54mm |
Number of Elements | 1 |
Number of Channels | 1 |
Power Dissipation-Max | 333W Tc |
Element Configuration | Single |
Operating Mode | ENHANCEMENT MODE |
Power Dissipation | 333W |
Case Connection | DRAIN |
Turn On Delay Time | 17 ns |
FET Type | N-Channel |
Transistor Application | SWITCHING |
Rds On (Max) @ Id, Vgs | 4m Ω @ 121A, 10V |
Vgs(th) (Max) @ Id | 4V @ 250μA |
Input Capacitance (Ciss) (Max) @ Vds | 5669pF @ 25V |
Current - Continuous Drain (Id) @ 25°C | 202A Tc |
Factory Lead Time | 1 Week |
Gate Charge (Qg) (Max) @ Vgs | 196nC @ 10V |
Contact Plating | Tin |
Rise Time | 190ns |
Mount | Through Hole |
Drive Voltage (Max Rds On,Min Rds On) | 10V |
Mounting Type | Through Hole |
Vgs (Max) | ±20V |
Package / Case | TO-220-3 |
Fall Time (Typ) | 33 ns |
Number of Pins | 3 |
Turn-Off Delay Time | 46 ns |
Continuous Drain Current (ID) | 202A |