Parameters | |
---|---|
Fall Time (Typ) | 110 ns |
Mounting Type | Through Hole |
Turn-Off Delay Time | 130 ns |
Package / Case | TO-220-3 |
Continuous Drain Current (ID) | 169A |
Threshold Voltage | 4V |
Number of Pins | 3 |
JEDEC-95 Code | TO-220AB |
Gate to Source Voltage (Vgs) | 20V |
Transistor Element Material | SILICON |
Drain Current-Max (Abs) (ID) | 75A |
Drain to Source Breakdown Voltage | 55V |
Operating Temperature | -55°C~175°C TJ |
Pulsed Drain Current-Max (IDM) | 680A |
Dual Supply Voltage | 55V |
Packaging | Tube |
Avalanche Energy Rating (Eas) | 560 mJ |
Recovery Time | 130 ns |
Published | 2004 |
Series | HEXFET® |
Max Junction Temperature (Tj) | 175°C |
Part Status | Active |
Nominal Vgs | 4 V |
Height | 19.8mm |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Length | 10.668mm |
Width | 4.826mm |
Number of Terminations | 3 |
Radiation Hardening | No |
REACH SVHC | No SVHC |
Termination | Through Hole |
RoHS Status | ROHS3 Compliant |
ECCN Code | EAR99 |
Lead Free | Lead Free |
Resistance | 5.3mOhm |
Additional Feature | AVALANCHE RATED, HIGH RELIABILITY, ULTRA LOW RESISTANCE |
Subcategory | FET General Purpose Power |
Voltage - Rated DC | 55V |
Technology | MOSFET (Metal Oxide) |
Current Rating | 169A |
Lead Pitch | 2.54mm |
Number of Elements | 1 |
Number of Channels | 1 |
Power Dissipation-Max | 330W Tc |
Element Configuration | Single |
Operating Mode | ENHANCEMENT MODE |
Power Dissipation | 330W |
Case Connection | DRAIN |
Turn On Delay Time | 13 ns |
FET Type | N-Channel |
Transistor Application | SWITCHING |
Rds On (Max) @ Id, Vgs | 5.3m Ω @ 101A, 10V |
Vgs(th) (Max) @ Id | 4V @ 250μA |
Input Capacitance (Ciss) (Max) @ Vds | 5480pF @ 25V |
Current - Continuous Drain (Id) @ 25°C | 169A Tc |
Gate Charge (Qg) (Max) @ Vgs | 260nC @ 10V |
Factory Lead Time | 1 Week |
Rise Time | 190ns |
Mount | Through Hole |
Drive Voltage (Max Rds On,Min Rds On) | 10V |
Vgs (Max) | ±20V |