Parameters | |
---|---|
Mount | Through Hole |
Mounting Type | Through Hole |
Package / Case | TO-262-3 Long Leads, I2Pak, TO-262AA |
Number of Pins | 3 |
Operating Temperature | -55°C~175°C TJ |
Packaging | Tube |
Published | 2010 |
Series | HEXFET® |
Part Status | Obsolete |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Resistance | 4.9MOhm |
Voltage - Rated DC | 55V |
Technology | MOSFET (Metal Oxide) |
Current Rating | 75A |
Number of Elements | 1 |
Power Dissipation-Max | 230W Tc |
Power Dissipation | 230W |
Turn On Delay Time | 18 ns |
FET Type | N-Channel |
Rds On (Max) @ Id, Vgs | 4.9m Ω @ 75A, 10V |
Vgs(th) (Max) @ Id | 4V @ 250μA |
Input Capacitance (Ciss) (Max) @ Vds | 4780pF @ 25V |
Current - Continuous Drain (Id) @ 25°C | 75A Tc |
Gate Charge (Qg) (Max) @ Vgs | 180nC @ 10V |
Rise Time | 110ns |
Drive Voltage (Max Rds On,Min Rds On) | 10V |
Vgs (Max) | ±20V |
Fall Time (Typ) | 82 ns |
Turn-Off Delay Time | 48 ns |
Continuous Drain Current (ID) | 75A |
Gate to Source Voltage (Vgs) | 20V |
Drain to Source Breakdown Voltage | 55V |
Height | 9.65mm |
Length | 10.668mm |
Width | 4.826mm |
Radiation Hardening | No |
RoHS Status | RoHS Compliant |
Lead Free | Lead Free |