Parameters |
Mount |
Surface Mount |
Mounting Type |
Surface Mount |
Package / Case |
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Number of Pins |
3 |
Transistor Element Material |
SILICON |
Operating Temperature |
-55°C~175°C TJ |
Packaging |
Tape & Reel (TR) |
Published |
2004 |
Series |
HEXFET® |
JESD-609 Code |
e3 |
Part Status |
Discontinued |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Number of Terminations |
2 |
ECCN Code |
EAR99 |
Terminal Finish |
Matte Tin (Sn) - with Nickel (Ni) barrier |
Additional Feature |
HIGH RELIABILITY, ULTRA LOW RESISTANCE |
Subcategory |
FET General Purpose Power |
Technology |
MOSFET (Metal Oxide) |
Terminal Position |
SINGLE |
Terminal Form |
GULL WING |
Peak Reflow Temperature (Cel) |
260 |
Time@Peak Reflow Temperature-Max (s) |
30 |
JESD-30 Code |
R-PSSO-G2 |
Number of Elements |
1 |
Configuration |
SINGLE WITH BUILT-IN DIODE |
Power Dissipation-Max |
3.8W Ta 200W Tc |
Operating Mode |
ENHANCEMENT MODE |
Power Dissipation |
200W |
Case Connection |
DRAIN |
Turn On Delay Time |
11 ns |
FET Type |
N-Channel |
Transistor Application |
SWITCHING |
Rds On (Max) @ Id, Vgs |
7.8m Ω @ 78A, 10V |
Vgs(th) (Max) @ Id |
4V @ 250μA |
Input Capacitance (Ciss) (Max) @ Vds |
5600pF @ 25V |
Current - Continuous Drain (Id) @ 25°C |
100A Tc |
Gate Charge (Qg) (Max) @ Vgs |
250nC @ 10V |
Rise Time |
150ns |
Drive Voltage (Max Rds On,Min Rds On) |
10V |
Vgs (Max) |
±20V |
Fall Time (Typ) |
140 ns |
Turn-Off Delay Time |
150 ns |
Continuous Drain Current (ID) |
100A |
Gate to Source Voltage (Vgs) |
20V |
Drain Current-Max (Abs) (ID) |
75A |
Drain-source On Resistance-Max |
0.0078Ohm |
Drain to Source Breakdown Voltage |
75V |
Pulsed Drain Current-Max (IDM) |
520A |
Height |
4.826mm |
Length |
10.668mm |
Radiation Hardening |
No |
RoHS Status |
ROHS3 Compliant |
Lead Free |
Lead Free |