IRF200P222
| Parameters | |
|---|---|
| Factory Lead Time | 1 Week |
| Mounting Type | Through Hole |
| Package / Case | TO-247-3 |
| Surface Mount | NO |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~175°C TJ |
| Packaging | Tube |
| Published | 2013 |
| Series | StrongIRFET™ |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| ECCN Code | EAR99 |
| Technology | MOSFET (Metal Oxide) |
| Terminal Position | SINGLE |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| JESD-30 Code | R-PSFM-T3 |
| Number of Elements | 1 |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| Number of Channels | 1 |
| Power Dissipation-Max | 556W Tc |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 556W |
| Case Connection | DRAIN |
| Turn On Delay Time | 25 ns |
| FET Type | N-Channel |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 6.6m Ω @ 82A, 10V |
| Vgs(th) (Max) @ Id | 4V @ 270μA |
| Input Capacitance (Ciss) (Max) @ Vds | 9820pF @ 50V |
| Current - Continuous Drain (Id) @ 25°C | 182A Tc |
| Gate Charge (Qg) (Max) @ Vgs | 203nC @ 10V |
| Drive Voltage (Max Rds On,Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Turn-Off Delay Time | 77 ns |
| Continuous Drain Current (ID) | 182A |
| JEDEC-95 Code | TO-247AC |
| Gate to Source Voltage (Vgs) | 20V |
| Drain-source On Resistance-Max | 0.0066Ohm |
| Drain to Source Breakdown Voltage | 200V |
| Pulsed Drain Current-Max (IDM) | 728A |
| Max Junction Temperature (Tj) | 175°C |
| Height | 24.99mm |
| RoHS Status | ROHS3 Compliant |
See Relate Datesheet
